12F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 12 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
RRM
• Designed and qualified for industrial and consumer level
DO-203AA (DO-4)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
12 A
DO-203AA (DO-4)
Single diode
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
12
T
C
144
19
265
280
351
320
100 to 1200
-65 to 175
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
12F(R)
60
80
100
120
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
V
R(BR)
, MINIMUM
AVALANCHE
VOLTAGE
V
(1)
-
-
500
750
950
1150
1350
12
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Note
(1)
Avalanche version only available from V
RRM
400 V to 1200 V
Revision: 13-Dec-13
Document Number: 93487
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
12F(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
SYMBOL
I
F(AV)
I
F(RMS)
P
R(1)
10 μs square pulse, T
J
= T
J
maximum
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
12
144
19
7
265
280
225
Sinusoidal half wave,
initial T
J
= T
J
maximum
235
351
320
250
226
3510
0.77
0.97
10.70
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 38 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
6.20
1.26
V
A
2
s
V
A
2
s
A
UNITS
A
°C
A
K/W
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
Note
(1)
Available only for avalanche version, all other parameters the same as 12F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Allowable mounting torque
Lubricated threads
TEST CONDITIONS
VALUES
-65 to 175
-65 to 200
2
0.5
1.5 + 0 - 10 %
13
1.2 + 0 - 10 %
10
7
0.25
See dimensions - link at the end of datasheet
UNITS
°C
K/W
N·m
lbf · in
N·m
lbf · in
g
oz.
Approximate weight
Case style
DO-203AA (DO-4)
Revision: 13-Dec-13
Document Number: 93487
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
12F(R) Series
www.vishay.com
Vishay Semiconductors
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.33
0.41
0.53
0.78
1.28
RECTANGULAR CONDUCTION
0.26
0.44
0.58
0.81
1.29
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
12F(R) Series
R
thJC
(DC) = 2.0 K/W
Maximum Allowable Case Temperature (°C)
180
180
12F(R) Series
R
thJC
(DC) = 2.0 K/W
170
170
Conduction Angle
160
Conduction Period
160
150
30°
140
60°
90°
120°
180°
130
0
4
8
12
16
20
Average Forward Current (A)
DC
150
30°
140
0
2
4
6
8
10
12
14
Average Forward Current (A)
60°
90°
120° 180°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
14
12
10
8
6
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
12
K/W
10
K/
W
R
th
SA
6
=8
K/
W
K/
W
15
K/W
20 K
/W
-D
elt
aR
30 K/W
4
2
0
0
2
4
6
8
10
12
0
14
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
12F(R) Series
T = 175°C
J
Fig. 3 - Forward Power Loss Characteristics
Revision: 13-Dec-13
Document Number: 93487
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
12F(R) Series
www.vishay.com
20
DC
180°
120°
90°
60°
30°
R
8K
/W
thS
A
=
6K
/
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
16
W
12
10 K
/W
12 K
/W
15 K
/W
20 K/W
-D
elta
R
8 RMS Limit
Conduction Period
30 K/W
4
12F(R) Series
T = 175°C
J
0
4
8
12
16
0
20
25
50
75
100
0
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
250
225
200
175
150
125
100
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 175°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
T = 25°C
J
T = 175°C
J
100
10
12F(R) Series
12F(R) Series
1
10
100
0
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Half Sine W
ave Forw
ard Current (A)
Transient Thermal Impedance Z
thJC
(K/W)
275
250
225
200
175
150
125
100
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 175°C
No Voltage Reapplied
Rated V
RRM
Reapplied
10
Steady State Value
R thJC = 2.0 K/W
(DC Operation)
1
12F(R) Series
12F(R) Series
0.1
0.001
0.1
Pulse Train Duration (s)
1
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 13-Dec-13
Document Number: 93487
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
12F(R) Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
12
1
F
2
R
3
120
4
M
5
1
2
3
-
-
-
Current rating: Code = I
F(AV)
F = Standard device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
5
-
-
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 13-Dec-13
Document Number: 93487
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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