The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 31 January 2014.
INCH-POUND
MIL-PRF-19500/645D
31 October 2013
SUPERSEDING
MIL-PRF-19500/645C
24 August 2007
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST,
TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a
center-tap configuration. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-257AA, isolated).
1.3 Maximum ratings.
Types
V
RWM
(1)
I
D
= 5
µA
dc
I
F
(1) (2)
T
C
=+100°C
I
FSM
(1)
t
p
= 8.3 ms
R
θJC
(1)
R
θJA
(1)
T
STG
and T
J
Vdc
A dc
1N6772, 1N6772R
400
8.0
1N6773, 1N6773R
600
8.0
(1)
Each individual diode.
(2)
Derate at 160 mA/°C above T
C
= +100°C.
A (pk)
60
60
°C/W
2.5
2.5
°C/W
45
45
°C
-65 to +150
-65 to +150
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics are at +25°C,
and for each diode.
Types
V
F1
I
F
= 4 A dc
V
F2
I
F
= 8 A dc
I
R1
(see 1.3)
V
R
= 0.8 V
RWM
I
R2
V
R
= 0.8 V
RWM
(see 1.3)
T
C
= +100°C
t
rr
C
J
V
R
= 5 V
f = 1 MHz
1N6772, 1N6772R
1N6773, 1N6773R
V dc
1.45
1.45
V dc
1.60
1.60
µA
dc
10
10
µA
dc
5000
5000
ns
60
60
pF
200
200
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/645D
Dimensions
Symbol
Inches
Min
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
.410
.190
.025
.500
Max
.430
.200
.035
.750
Millimeters
Min
10.4
4.82
0.64
12.70
Max
10.9
5.08
0.89
19.05
.120 typ
.100 bsc
.140
.527
.645
.035
.410
.150
.537
.665
.045
.420
3.05 typ
2.54 bsc
3.55
13.4
16.4
0.90
10.4
3.80
13.6
16.9
1.15
10.7
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. All terminals are isolated from case.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
SCHEMATIC
1N6772, 1N6773
Terminal
1
2
3
Description
Anode 1
Cathode
Anode 2
1N6772R, 1N6773R
Terminal
1
2
3
Description
Cathode 1
Anode
Cathode 2
FIGURE 1. Physical dimensions and configuration (TO-257AA, isolated).
2
MIL-PRF-19500/645D
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://quicksearch.dla.mil
or
https://assist.dla.mil.
or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1. When lead formation is performed, as a minimum, the vendor shall perform 100
percent hermetic seal in accordance with screen 14 of table II of MIL-PRF-19500 and 100 percent DC testing in
accordance with group A, subgroup 2 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3
MIL-PRF-19500/645D
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANTX, JANTXV, and JANS levels). Screening shall be in accordance with appendix E, table E-IV
of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Appendix E, table E-
IV of
MIL-PRF-19500)
(1) 3c
9 and 10
11
12
13
Measurement
JANS level
JANTX and JANTXV levels
Thermal impedance (see 4.3.2)
Not applicable
I
R1
and V
F1
See 4.3.1, t = 240 hours
Subgroups 2 and 3 of table I herein;
V
F1
and I
R1
;
∆I
R1
≤
100 percent of
initial value or ±2.5
µA,
whichever is
greater;
∆V
F1
≤
±100 mV.
Thermal impedance (see 4.3.2)
Not applicable
I
R1
and V
F1
See 4.3.1, t = 48 hours
Subgroup 2 of table I herein;
V
F1
and I
R1
;
∆I
R1
≤
100 percent of
initial value or ±2.5
µA
whichever
is greater;
∆V
F1
≤
±100 mV.
* (1) Thermal impedance shall be performed any time after temperature cycling, screen 3a, JANTX and
JANTXV levels do not need to be repeated in screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test
condition A. T
C
= +125°C; V
R
= 0.8 of rated V
RWM
(see 1.3).
4.3.2 Thermal impedance The thermal impedance measurements shall be performed in accordance with method
3101 or 4081 of MIL-STD-750. The thermal impedance conditions and maximum thermal impedance limit shall be
derived by each vendor. The chosen thermal impedance measurement and conditions for each device in the
qualification lot shall be submitted in the qualification report and a thermal impedance curve shall be plotted (see
table II, subgroup 4 herein).
4
MIL-PRF-19500/645D
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I,
subgroup 2 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the
applicable steps of table III herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 and as
follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable
steps of table III herein.
4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
B4
Method
1037
Condition
I
F
or I
O
= 1.25 A to 8 A;
∆T
J
= +85°C minimum.
4.4.2.2 Group B inspection, appendix E, table E-VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B3
Method
1037
Condition
I
F
or I
O
= 1.25 A to 8 A;
∆T
J
= +85°C minimum, for
2,000 cycles minimum.
Not applicable.
B5
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)
and delta requirements shall be in accordance with the applicable steps of table III herein.
4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500.
Subgroup
C2
C5
C6
Method
2036
4081
1037
Condition
Test condition A, 5 pounds, t = 15 seconds ±3 seconds.
R
θ
JC
(maximum) = 2.5
°C/W.
I
F
or I
O
= 1.25 A to 10 A;
∆T
J
= +85°C minimum, for
6,000 cycles minimum.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table II herein. Electrical measurements (end-points) and delta requirements shall be in
accordance with the applicable steps and footnotes of table III herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
5
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