电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANTXV1N6772

产品描述Rectifier Diode, 1 Phase, 2 Element, 8A, Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
产品类别分立半导体    二极管   
文件大小20KB,共2页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
下载文档 详细参数 全文预览

JANTXV1N6772在线购买

供应商 器件名称 价格 最低购买 库存  
JANTXV1N6772 - - 点击查看 点击购买

JANTXV1N6772概述

Rectifier Diode, 1 Phase, 2 Element, 8A, Silicon, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

JANTXV1N6772规格参数

参数名称属性值
厂商名称International Rectifier ( Infineon )
零件包装代码TO-257AA
包装说明R-MSFM-P3
针数3
Reach Compliance Codeunknown
Is SamacsysN
其他特性HIGH RELIABILITY
应用EFFICIENCY
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-257AA
JESD-30 代码R-MSFM-P3
最大非重复峰值正向电流60 A
元件数量2
相数1
端子数量3
最大输出电流8 A
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
参考标准MIL-19500/645
最大反向恢复时间0.06 µs
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
Base Number Matches1

文档预览

下载PDF文档
1N6768,
1N6769,
1N6770,
1N6771,
1N6772,
1N6773,
1N6768R
1N6769R
1N6770R
1N6771R
1N6772R
1N6773R
JAN1N6768,
JAN1N6769,
JAN1N6770,
JAN1N6771,
JAN1N6772,
JAN1N6773,
JAN1N6768R,
JAN1N6769R,
JAN1N6770R,
JAN1N6771R,
JAN1N6772R,
JAN1N6773R,
JANTX1N6768,
JANTX1N6769,
JANTX1N6770,
JANTX1N6771,
JANTX1N6772,
JANTX1N6773,
JANTX1N6768R,
JANTX1N6769R,
JANTX1N6770R,
JANTX1N6771R,
JANTX1N6772R,
JANTX1N6773R,
JANTXV1N6768,
JANTXV1N6769,
JANTXV1N6770,
JANTXV1N6771,
JANTXV1N6772,
JANTXV1N6773,
JANTXV1N6768R
JANTXV1N6769R
JANTXV1N6770R
JANTXV1N6771R
JANTXV1N6772R
JANTXV1N6773R
JAN, JANTX, JANTXV CENTER TAP RECTIFIER IN A
TO-257AA, QUALIFIED TO MIL-PRF-19500/644 & 19500/645
16 Amp, 50 To 600 Volts, 35 To 60 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Recovery Time
Hermetic Metal Package, JEDEC TO-257AA Outline
Low Thermal Resistance
Isolated Package
High Surge
DESCRIPTION
This series of products in a hermetic isolated package is specifically designed for use
at power switching frequencies in excess of 100 kHz. The series combines two high
e
fficiency devices into one package, simplifying installation, reducing heat sink
hardware, and the need to obtain matched components. These devices are ideally
suited for Hi-Rel applications where small size and high performance is required. The
common cathode and common anode configuration are both available.
ABSOLUTE MAXIMUM RATINGS
(Per Leg) @ 25°C
Peak Inverse Votg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 t 60
lae
0 o 0V
Maximum Average D.C. Output Current @ TC = 1 0 C . . . . . . . . . . . . . . . . . . . . 8
A
SreCret(o-eeiie83me)...............................6A
ug urn NnRpttv . sc
0
Operating and Storage Te p r t r R n e . . . . . . . . . . . . . . . . . - 6 ° C t + 1 0 C
meaue ag
5
o 5°
X
.
S C H E M ATIC
1
2
COMMON
ANODE
1
1
2
COMMON
CATHODE
3
1N67XX
.150
.140
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
1
2
3
3
1N67XXR
3
.430
.410
.038 MAX.
Note:
1N67XX =
DOUBLER
Cathode
Common
2
1N67XXR = Common Anode
.750
.500
.005
.035
.025
.100 TYP.
.120 TYP.
8 02 R6
Supersedes 4 11 R5

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1865  2810  1774  2241  1246  17  32  9  12  49 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved