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1N4151W-TP

产品描述Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, SOD-123, 2 PIN
产品类别分立半导体    二极管   
文件大小169KB,共4页
制造商Micro Commercial Components (MCC)
标准
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1N4151W-TP概述

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, SOD-123, 2 PIN

1N4151W-TP规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micro Commercial Components (MCC)
零件包装代码SOD
包装说明SOD-123, 2 PIN
针数2
制造商包装代码SOD-123
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流0.15 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
最大功率耗散0.41 W
认证状态Not Qualified
最大重复峰值反向电压75 V
最大反向恢复时间0.004 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10
Base Number Matches1

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
1N4151W
Features
Sillcon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including the
DO-35 case with the type designation 1N4151, and the MiniMELF
case with the type disignation DL4151
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Small Signal
Switching Diode
75 Volts
SOD123
A
Lead Free Finish/RoHS Compliant ("P" Suffix
designates RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Rating
Reverse Voltage
Peak Reverse Voltage
(1)
Average Rectified Forward Current
O
Surge Forward Current at t<1s and Tj=25 C
Operating and Storage Junction Temperature
Range
Characteristic
O
Power Dissipation at T
amb
=25 C
Thermal Resistance, Junction to Ambient
Value
50
75
150
500
-55~+150
Unit
V
V
mA
mA
O
C
B
C
E
Thermal Characteristics
Symbol
P
D
R
JA
Value
410
450
Unit
mW
O
C /W
H
D
G
J
Electrical Characteristics @ 25
O
C Unless Ot erwise Noted
h
Symbol
V
F
I
R
V
(BR)R
C
T
Characteristic
Forward Voltage
(I
F
=50mAdc)
Leakage Current
(V
R
=50Vdc)
O
(V
R
=20Vdc, T
A
=150 C)
Reverse Breakdown Voltage
(I
R
=5.0uAdc)
Total Capacitance
(V
R
=V
F
=0)
Reverse Recovery Time
(I
F
=I
R
=10mAdc, I
rr
=1.0mAdc)
(I
F
=10mAdc, R
L
=100OHMS,
V
R
=6.0Vdc)
Rectification Efficiency
(f=100MHz, V
RF
=2.0Vdc)
Min
---
---
---
75
---
Max
1.0
50
50
---
2.0
4.0
2.0
---
Unit
Vdc
nA
uA
V
pF
DIM
A
B
C
D
E
G
H
J
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
-----
.053
-----
1.35
.012
.031
0.30
.78
.006
-----
0.15
-----
-----
.01
-----
.25
-----
.006
-----
.15
SUGGESTED SOLDER
PAD LAYOUT
0.093
NOTE
T
rr1
---
ns
0.45
---
Note:
1.
Valid provided that electrodes are kept at ambient temperature.
0.048”
0.036”
www.mccsemi.com
Revision: 4
1 of 4
2008/01/30

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