Datasheet> 器件分类 > 分立半导体> 二极管> 1N4151.TR

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1N4151.TR: 产品描述Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, DO-35, 2 PIN; 产品类别分立半导体二极管; 文件大小33KB，共2页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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1N4151.TR概述

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, DO-35, 2 PIN

1N4151.TR规格参数

参数名称	属性值
厂商名称	Fairchild
零件包装代码	DO-35
包装说明	O-XALF-W2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-XALF-W2
元件数量	1
端子数量	2
最大输出电流	0.15 A
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	LONG FORM
最大功率耗散	0.5 W
认证状态	Not Qualified
最大重复峰值反向电压	75 V
最大反向恢复时间	0.004 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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1N4151

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

Symbol

RRM

F(AV)

FSM

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

Value

150

0.5

2.0

-65 to +175

175

Units

°C

stg

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 200 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

Parameter

Value

500

300

Units

°C/W

Electrical Characteristics

Symbol

rr1

rr2

= 25°C unless otherwise noted

Parameter

Breakdown Voltage

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

Test Conditions

= 5.0

µA

= 50 mA

= 50 V

= 50 V, T

= 150°C

= 0 V , f = 1.0 MHz

= I

= 10 mA, I

= 1.0 mA,

= 100Ω

= 10 mA, V

= 6.0 V,

= 100Ω

Min

Max

1.0

2.0

4.0

2.0

Units

µA

Pulse test : Pulse width=300us, Duty Cycle=2%

2004

Fairchild Semiconductor Corporation

1N4151, Rev. A

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