,
Lr
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N3305thru
1N3350B
and
1N4549Bthru
1N4556B
FEATURES
• ZENER VOLTAGE 3.9 TO 200V
• LOW ZENER IMPEDANCE
• HIGHLY RELIABLE AND RUGGED
•
FOR MIIITARY AND OTHER DEMANDING APPLICATIONS
(See
Below)
SILICON
50 WATT
ZENER DIODES
MAXIMUM RATINGS
Junction and Storage Temperatures: — 65°C to +175°C
DC Power Dissipation: 50 Watts
Power Derating: 0.5 W/° above 75"C
Forward Voltage @ 10 A: 1.5 Volts
'ELECTRICAL CHARACTERISTICS @ 30 °C Case Tempera tu
MAX. DYNAMIC
MAX.
HEvfise
NOMINAL
JEOEC
TYPt NO.
(Hotel)
'1N4S498
l 1N4550B
MN45S1B
MN4552B
tlN45S36
'1N4554B
1*145559
!N4b56B
*
1N3305B
'1N3306B
1N33I)->B
:1M3308B
»1M33I»B
»1N33IOB
1M3311B
1N3312B
1N3313B
HN3314B
T1N3315B
1N3316B
i
1N3317B
1N3318B
• 1N3319B
1N3320B
IN33I1B
1N3322B
i 1N3323B
-1N3324B
•
1N3325B
: 1N3326B
. 1N3327B
t!N3328fl
1N3329B
'1N3330B
1N333IS
MN3337B
1 N33338
'• \B
> 1N3335B
'1N333GB
•1N3337B
MN3338B
1N3339B
:
1N3340R
IN 134 IB
1N3342B
1N33430
'1N3344B
1M3345B
1
1N334GB
.11HU
VOITAGE
V.
ffi
1,.
Vdlll
INolt 2)
3.9
4.3
4.7
6.1
6.6
6.2
6.8
7.3
8.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
1S.O
16.O
17.0
cmufHi
(I..) *A
ZEKEI
IISI
IMI>EDANCE
t
INol[ 1
!„ » 1.
MU. DC
II..
I
OHMS
3.200
2.900
2.660
2.4SO
2.2bO
2.000
1.850
1.C30
1.850
1.700
1.500
1.370
1,200
1,100
1.000
960
890
830
78O
740
0.18
0,18
0.12
0.12
0.12
0.14
0.1«
0.24
0.20
0.30
0.40
0.60
0.60
0.80
1.00
1.10
1.20
1.40
1.60
130
2.00
2.20
2.40
2.50
2.60
3.70
230
3,00
3.20
3.50
4.00
4iO
4.50
5.00
5.00
5.20
5.50
6.00
7.00
8.00
9.00
11.00
15.00
20.00
Zjk<a
Izk - 5mA
OHMS
400
ZENfR
CU«»(N1
mA
500
600
660
900
1.000
200
11.900
10,650
9,700
8,900
inif>
il
el/I
a.,
i'A
voiTs
%rc
160
o.s
-0.044
150
100
20
20
20
10
10
0.6
1.0
1,0
1.0
2.0
2.0
3.0
4.5
6.0
5.4
6.1
6.7
8.4
9.1
9.9
11,4
11.4
12.2
13.0
13,7
13.7
15.2
16.7
18.2
18.2
20.8
72.8
26.1
27.4
29.7
32.7
32.7
XX
LEA
HACE"
CU
ME»I
TYPICUl
TEMP.
COEff.
8,100
7,300
6,650
0.05O
6.800
5.900
5.2OO
4.800
4,300
3.900
3,800
3.300
3.000
2.800
2.650
2.500
2.300
2.2OO
too
-0.033
-0.016
* 0.010
+0.03O
•0.049
•0.053
*a057
0.040
0.046
0.048
0.050
0.065
0.060
0.066
0.065
0.070
0.070
0.070
0.076
0.076
0.075
0.075
0.080
O.OBO
0.080
0.066
0.085
O.OB5
0.085
0,090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
O.O90
0.090
0.095
0.096
O.O95
0.096
O.O95
0.095
0.095
0,096
0,096
0.100
11.506
0.4SO
M 80tl
11.430
I
70
70
70
70
80
80
80
80
80
80
80
80
80
80
80
BO
80
90
SO
90
90
80
90
90
100
100
100
100
1OO
110
120
14O
150
1EO
180
200
2)0
220
240
275
325
400
460
SOO
625
600
300
125
50
25
25
1O
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
I MAX
\3
WT
•
:ftj— '/«•'« UNF-Z«
=Q
TO WITHSTAND A
*-^
TORQUE UP TO
30 IN-LB. WHEN NUT
IS TIGHTENED OK STUD
18.0
^700
MO
19.0
20.0
630
570
22.0
520
24.0
26.0
500
27.0
30.0
33.0
36.0
39.0
43.0
4S.O
47.0
5O.O
51.0
52.0
56.0
82.0
68.0
75.0
82.0
91.0
10O.O
106.0
110.0
120,0
130.0
140.0
150.0
IM.O
173.0
1M.O
20O.O
480
420
3flO
3SO
320
290
280
270
250
24S
240
220
200
1(0
170
ISO
140
120
120
100
95
90
B5
BO
70
65
FIGURE I
2.1OO
1.900
1.750
1.550
1,500
1,400
1.300
1,150
1.050
975
930
880
830
810
79O
740
860
800
540
490
420
4OO
380
365
336
310
290
270
250
230
220
200
All dimensions in
INCH
xt
xs
42.6
42.6
47.1
51.7
M.O
63.2
69.2
76.0
83.0
83.0
91.2
99.1
14.0
14.0 |
21.6
21.8
38J
51.0
no
25.00
30.00
40.00
50.00
GO. 00
75.00
80.00
85.00
90.00
100.00
» 1N3347B
1N3348B
•• 1M3349e
:
1N3350B
n
MECHANICAL
CHARACTERISTICS
CASE: Industry Standard DO-5,
11/16" Hex. stud with 1/4-28
threads, welded, hermetically
sealed metal and glass.
DIM ENSIGNS: See outline draw-
ing Fig. 1,
FINISH: All external surfaces are
corrosion resistant and terminal
solderable.
THERMAL RESISTANCE: l.S°C/W
(Typical) junction to stud.
POLARITY:
Standard polarity
anode to case. Reverse polarity
(cathode to case) indicated by
suffix R .
NI Seini-l I'uduclon reserve* th« right to thong* t«l condilions. parameter limits ;ind pickup dimension* without notice
Inliirmulion liirnnhtd by N) Scmi-Cunduclun h believed (u he huh ucvuratt nml relijhl< .11 Ih* lime
ut
guinf to press. However M
Soiii ( iiiiJuilu" bMiiiwt mi rcspiiiuibiliiy Cor my em<n >>r oiniunuij JistuvcreJ in in u>e M Seini-t. viiJiKh r< c(Ki.ur:i«ei
n-.n II-IT-; M VLiili rN ii liiM^lKcl] irecurr«:rtrh<Hir«plin:ii1i!l'Tifirn
嵌入式系统
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