Bulletin PD-20997 rev. E 12/02
175BGQ030
175BGQ030J
SCHOTTKY RECTIFIER
175 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular waveform
@ T
C
I
DC
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
@175 Apk typical
@T
J
T
J
range
Maximum
175BGQ030
175
115
248
30
8000
0.45
150
- 55 to 150
Description/ Features
Units
A
°C
A
V
A
V
°C
°C
The 175BGQ030 Schottky rectifier has been optimized for ultra low
forward voltage drop specifically for low voltage output in high
current AC/DC power supplies.
The proprietary barrier technology allows for reliable operation up
to 150°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
150°C T
J
operation
High Frequency Operation
Ultra low forward voltage drop
Continuous High Current operation
Guard ring for enhanced ruggedness and long term
reliability
PowIRtab
TM
package
Case Styles
175BGQ030
175BGQ030J
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1
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
30
V
RWM
Max. Working Peak Reverse Voltage (V)
175BGQ030
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
F(RMS)
RMS Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non-RepetitiveAvalancheEnergy
Repetitive Avalanche Current
175BGQ
Units
175
248
8000
1500
80
12
A
mJ
A
A
A
T
C
= 114°C
Conditions
50% duty cycle @ T
C
= 115°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 °C, I
AS
= 12 Amps, L = 1.12 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Forward Voltage Drop
(1) (2)
175BGQ
Units
Typ. Max.
Conditions
@ 100A
@ 175A
@ 100A
@ 175A
T
J
= 25 °C
T
J
= 125°C
T
J
= 125 °C
T
J
= 150 °C
T
J
=
T
J
max.
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
R
V
R
= 15V
V
R
= 30V
0.46 0.48
0.53 0.56
0.35 0.38
0.45 0.49
V
V
V
V
mA
mA
mA
mA
V
mΩ
pF
nH
V/ µs
I
RM
Reverse Leakage Current (1)
1.3
4.5
450 650
160 220
1400 2000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Max. Junction Capacitance
Typical Series Inductance
(Rated V
R
)
0.242
1.4
8500
3.5
10000
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) V
FM
= V
F(TO)
+ r
t
x I
F
175BGQ
Units
-55 to 150
-55 to 150
0.25
0.20
5 (0.18)
Min.
Max.
1.2 (10)
2.4 (20)
°C
°C
°C/W
°C/W
g (oz.)
N*m
(Ibf-in)
DCoperation
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Mounting surface , smooth and greased
PowIRtab
TM
2
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
1000
10000
1000
100
10
1
0.1
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
10000
Junction Capacitance - C
T
(pF)
0.01
T
J
= 150°C
125°C
100°C
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
100
Reverse Current - I
R
(mA)
0
5
10
15
20
25
30
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
T
J
= 25°C
1
0
0.2
0.4
0.6
0.8
1
1.2
1000
0
5
10
15
20
25
30
35
Forward Voltage Drop - V
FM
(V)
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
Thermal Impedance Z
thJC
(°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.1
D=
D=
D=
D=
D=
0.75
0.50
0.33
0.25
0.20
Single Pulse
(Thermal Resistance)
P
DM
Notes:
t1
t2
1. Duty factor D = t 1/ t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
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3
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
150
Allowable Case Temperature - (°C)
Average Power Loss - (Watts)
140
DC
130
120
110 Square wave (D = 0.50)
80% Rated V
R
applied
100
90
see note (2)
180
160
140
120
100
80
60
40
20
120
160
200
240
280
0
0
50
100
150
200
250
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
80
0
40
80
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
(A)
10000
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
FSM
1000
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
40HFL40S02
+
DUT
IRFP460
Rg = 25 ohm
Vd = 25 Volt
CURRENT
MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Outline Table
Case Style
PowIRtab
TM
Dimensions in millimeters and (inches)
Case Style
PowIRtab
TM
"J" version
Dimensions in millimeters and (inches)
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