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1N4006GPAMP

产品描述Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
产品类别分立半导体    二极管   
文件大小273KB,共4页
制造商Fagor Electrónica
标准
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1N4006GPAMP概述

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N4006GPAMP规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Fagor Electrónica
包装说明DO-41, 2 PIN
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-204AL
JESD-30 代码O-PALF-W2
JESD-609代码e3
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压800 V
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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1N4001GP ........ 1N4007GP
1.0 Amp. Glass Passivated Junction Rectifier
Voltage
50V to 1000 V
Current
1.0 A at 75º C
R
DO-204AL (DO-41)
FEATURES
• Glass passivated chip junction
• Hyperectifier structure for high reliability
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical IR less than 0.1 µA
• High forward surge capability
• Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
MECHANICAL DATA
• Case
:
DO-204AL (DO-41)
Epoxy meets UL 94V-0 flammability rating.
• Polarity
:
Color band denotes cathode end
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Used in general purpose rectification of power supplies, inverters,
converters and freewheeling diodes application
Maximun Ratings and Electrical Characteristics at 25°C
1N
1N
1N
1N
1N
1N
1N
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
V
RRM
I
F(AV)
I
FRM
I
FSM
I
2
t *
T
j
T
stg
E
RSM
Peak Recurrent Reverse Voltage (V)
Forward Current at Tamb = 75 °C
Recurrent Peak Forward Current
8.3 ms. Peak Forward Surge Current
(Jedec Method)
50
100
200
400
1.0 A
10 A
30 A
3.7 A
2
s
600
800
1000
Rating for fusing (t < 8.3ms)
Operating Temperature Range
Storage Temperature Range
Maximum non Repetitive Peak
Reverse Avalanche energy.
I
R
= 0.5 A; T
j
= 25 °C
-65 to +175°C
-65 to +175°C
20 mJ
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th(j-a)
Maximum Forward Voltage Drop at I
F
= 1 A
Maximum Reverse Current at V
RRM
Thermal Resistance (I = 10mm.)
at 25 °C
at 125 °C
Max.
Typ.
1.1 V
5 µA
50 µA
60 °C/W
45 °C/W
* For device using on bridge rectifier application
www.fagorelectronica.com
Document Name: 1n4000gp
Version: Jun-12
Page Number: 1/4

 
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