1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
SCOTTSDALE DIVISION
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are
JEDEC registered selections for both unidirectional and bidirectional devices.
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are
bi-directional where they all provide a very low specified clamping factor for
minimal clamping voltages (V
C
) above their respective breakdown voltages
(V
BR
) as specified herein. They are most often used in protecting sensitive
components from inductive switching transients or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5 . They are
also very successful in protecting airborne avionics and electrical systems.
Since their response time is virtually instantaneous, they can also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
•
•
•
Unidirectional and bidirectional TVS series for thru-hole
mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
t
clamping
(0 volts to V
(BR)
min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
Working voltage (V
WM
) range 5 V to 45 V
Low clamping factor (ratio of actual V
C
/V
BR
): 1.33 @
full rated power and 1.20 @ 50% rated power
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, MSP prefixes respectively to part
numbers, e.g. MX1N6356, etc.
RoHS Compliant devices available by adding “e3” suffix
Surface mount equivalent packages also available as
SMCJ6356 – SMCJ6372 (consult factory for other
surface mount options)
Plastic axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
APPLICATIONS / BENEFITS
•
Designed to protect Bipolar and MOS Microprocessor
based systems.
•
Protection from switching transients and induced RF
•
ESD and EFT protection per IEC 61000-4-2 and -4-4
•
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
•
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
•
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
•
Inherently radiation hard per Microsemi MicroNote
050
•
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
•
1500 Watts for 10/1000
μs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (See Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +175
o
C
o
THERMAL RESISTANCE: 50 C/W junction to lead at
0.375 inches (10 mm) from body or 110
o
C/W junction to
2
ambient when mounted on FR4 PC board with 4 mm
copper pads (1 oz) and track width 1 mm, length 25 mm
o
DC Power Dissipation
*
: 1 Watt at T
L
< +125 C 3/8” or 10
mm from body (also see Figure 5)
Forward surge current: 200 Amps for 8.3ms half-sine
wave at T
A
= +25
o
C for unidirectional only (1N6356-6364)
Solder Temperatures: 260
o
C for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead or
RoHS Compliant annealed matte-Tin plating
solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case and
polarity indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1N6356 thru 1N6372, e3
MPT-5 thru MPT-45C, e3
•
•
•
•
•
•
•
•
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
©
2006
3-31-2006 REV B
*
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
SCOTTSDALE DIVISION
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
ELECTRICAL CHARACTERISTICS @ 25
o
C (Unidirectional)
MAXIMUM
MINIMUM*
REVERSE
BREAKDOWN
STAND-OFF
LEAKAGE
VOLTAGE
VOLTAGE
@V
WM
(NOTE 1)
@ 1.0 mA
I
D
MICROSEMI
V
WM
V
(BR)
(min)
VOLTS
PART NUMBER
μA
VOLTS
1N6356
MPT-5
5.0
300
6.0
1N6357
MPT-8
8.0
25
9.4
1N6358
MPT-10
10.0
2
11.7
1N6359
MPT-12
12.0
2
14.1
1N6360
MPT-15
15.0
2
17.6
1N6361
MPT-18
18.0
2
21.2
1N6362
MPT-22
22.0
2
25.9
1N6363
MPT-36
36.0
2
42.4
1N6364
MPT-45
45.0
2
52.9
V
F
at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
I
PP1
= 1A
V
C
VOLTS
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ I
PP2
= 10A
V
C
VOLTS
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
I
PP3
A
160
100
90
70
60
50
40
23
19
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C (Bidirectional)
MPT-5C
1N6365
MPT-8C
1N6366
MPT-10C
1N6367
MPT-12C
1N6368
MPT-15C
1N6369
MPT-18C
1N6370
MPT-22C
1N6371
MPT-36C
1N6372
MPT-45C
C Suffix indicates Bidirectional
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
300
25
2
2
2
2
2
2
2
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.1
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
7.5
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
160
100
90
70
60
50
40
23
19
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (V
WM
) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
1N6356 thru 1N6372, e3
MPT-5 thru MPT-45C, e3
FIGURE 1
Peak Pulse Power vs. Pulse Time
Copyright
©
2006
3-31-2006 REV B
FIGURE 2
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
NXP MCU
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