Preliminary Data Sheet
May 2004
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, reliability, and best-in-class
thermal resistance. Packaged in an industry-stan-
dard package incorporating internal matching and
capable of delivering a minimum output power of
85 W, it is ideally suited for today's RF power ampli-
fier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09085EU
AGR09085EF
Sym
Value
Unit
R
θJC
0.7
0.7
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR09085EU
AGR09085EF
Derate Above 25
°C:
AGR09085EU
AGR09085EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, 15
8.5
I
D
P
D
250
250
1.43
1.43
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
YLE 1
T
J
06, STYLE 1
AGR09085EU (unflanged)
AGR09085EF (flanged)
T
STG
–65, 150
Figure 1. Available Packages
Features
■
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
■
■
■
■
■
■
■
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, and traffic codes 8—13:
— Output power (P
OUT
): 20 W.
— Power gain: 18 dB.
— Efficiency: 28%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc).
1.98 MHz offset: –60 dBc).
— Return loss: 10 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
85 W minimum output power.
Table 3. ESD Rating*
AGR09085E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 200 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
DQ
= 800 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Output Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
OSS
C
RSS
—
—
48
2.3
—
—
pF
pF
Symbol
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
—
—
—
6
—
3.6
0.12
—
4.8
—
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
2.6
8
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(V
DS
= 28 V, P
OUT
= 8 W, I
DQ
= 800 mA)
Output Power
(V
DS
= 28 V, 1 dB compression, I
DQ
= 800 mA)
Drain Efficiency
(V
DS
= 28 V, P
OUT
= P1dB, I
DQ
= 800 mA)
Third-order Intermodulation Distortion
(100 kHz spacing, V
DS
= 28 V, P
OUT
= 90 WPEP, I
DQ
= 800 mA)
Input VSWR
Ruggedness
(V
DS
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA, f = 880 MHz,
VSWR = 10:1, all angles)
G
L
P1dB
η
IM3
VSWR
I
—
17
85
—
—
—
18
105
55
30
2:1
—
—
—
—
—
dB
W
%
dBc
—
No degradation in output
power.
2
Agere Systems Inc.
Preliminary Data Sheet
May 2004
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09085E
V
GG
R4
C25
C24
R3
FB1
R2
C23
C12 C11
C10
C9
C8
R1
C15
C13 C14
RF OUTPUT
Z17
Z11
Z12
Z13
Z14 C16 Z15
Z16
C17 C18 C19 C20 C21 C22
C27
V
DD
Z10
Z1
RF INPUT
C1
Z2
C2
C3
C4
C7
C5
C6
Z3
Z4
Z5
Z6
Z7
Z8
Z9
2
1
DUT
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
A. Schematic
2
3
1
Parts List:
■
Microstrip line: Z1 0.834 in. x 0.066 in.; Z2 0.665 in. x 0.066 in.; Z3 0.290 in. x 0.066 in.; Z4 0.050 in. x 0.180 in.; Z5 0.650 in. x 0.180 in.;
Z6 0.050 in. x 0.800 in.; Z7 0.132 in. x 0.800 in.; Z8 0.105 in. x 0.800 in.; Z9 0.057 in. x 0.800 in.; Z10 0.543 in. x 0.700 in.;
Z11 0.108 in. x 0.700 in.; Z12 0.760 in. x 0.180 in.; Z13 0.200 in. x 0.180 in.; Z14 0.470 in. x 0.066 in.; Z15 0.495 in. x 0.066 in.;
Z16 1.100 in. x 0.050 in.; Z17 1.100 in. x 0.050 in.
®
■
ATC
chip capacitor: C1, C8, C16, C17: 47 pF 100B470JW; C3 2.7 pF 100B2R7BW; C4, C13, C14: 12 pF 100B120JW;
C5, C6, C9, C18: 10 pF 100B100JW; C7 5.6 pF 100B5R6BW.
■
0603 chip capacitor: C10, C19: 220 pF.
®
■
Kemet
chip capacitor: C11, C26: 0.01 µF C1206C103KRAC7800; C12, C20, C23: 0.1 µF C1206C104KRAC7800.
®
■
Johanson Giga-Trim
variable capacitor, 27291SL: C2, C15: 0.8 pF to 8 pF.
®
■
Sprague
tantalum chip capacitor: C21, C24, C25, C27: 10 µF, 35 V; C22 22 µF, 35 V.
■
1206 size chip resistor (0.25 W): R1 (fixed film RM73B2B510J) 51
Ω;
R2, (fixed film RM73B2B563J) 56 kΩ;
R3 (fixed film RM73B2B120J) 12
Ω;
R4 (fixed film RM73B2B122J) 1.2 kΩ.
®
■
Kreger
ferrite bead: FB1 2743D19447.
®
■
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
ε
r = 3.5.
B. Component Layout
Figure 2. AGR09085E Test Circuit
Agere Systems Inc.
3
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Typical Performance Characteristics
0.11
0.12
0.38
0.13
0.37
0.14
0.36
0.1
0.9
0.0
7
0.
0.
44
70
0.0
RE
AC
TA
75
NC
EC
OM
PO
N
EN
T
(+
jX
/Z
R
,O
o)
65
0.5
3
0.4
0
13
VE
TI
CI
PA
CA
06
)
/Yo
(+jB
CE
N
TA
EP
SC
SU
0.6
60
0.4
0
12
0.7
2
0.2
14
0.4
0
5
0.4
5
0.6
0.0
4
6
0.4
15
0
0.0
—>
WAVELE
NGTH
S
TOW
ARD
0.0
0.49
OAD
<—
GEN
ARD
L
ERA
0.48
S
TOW
±
180
.47
TO
TH
170
R—
-170
ENG
VEL
0.47
>
WA
160
0
-90
90
-16
80
0.8
1.0
1.0
IND
UCT
IVE
85
f1
Z
L
0.4
f3
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
Z
0
= 5
Ω
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.1
0.4
f1
o)
jB/Y
E
(-
NC
A
PT
0.48
Z
S
0.6
f3
0.
8
-85
MHz (f)
865 (f1)
880 (f2)
895 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance)
(Complex
Optimum Load Impedance)
0.35 – j0.73
1.66 + j1.22
0.35 – j0.77
1.67 + j1.18
0.33 – j0.82
1.69 + j1.14
DRAIN (1)
Z
L
SOURCE (3)
GATE (2)
Z
S
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
1.0
0.2
Agere Systems Inc.
2.0
1.4
0
0.
8
0.6
8
0.0
0.8
1.2
55
9
0.0
1
0.4
0.4
110
0.39
100
90
50
0.15
0.35
80
45
1.0
40
70
35
0.
4
0.3
0.2
0.1
Preliminary Data Sheet
May 2004
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
0
-10
-20
ACPR (dBc)
S
-30
ACP+
-40
-50
ALT1+
-60
ALT-
-70
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
ACP-
P
OUT
(W)S
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.8 A, T
C
= 30 °C.
FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13; OFFSET 1 = 750 kHz;
OFFSET 2 = 1.98 MHz; OFFSET 1 AND 2 BW = 30 kHz.
Figure 4. ACPR vs. P
OUT
19
18
0
POWER GAIN (dB)
a
17
16
15
14
13
12
11
10
860
POWER GAIN
P
OUT
= 100 W
P
OUT
= 10 W
-4
-6
-8
-10
RETURN LOSS
-12
-14
-16
865
870
875
880
885
890
895
-18
900
FREQUENCY (MHz)A
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.8 A, T
C
= 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
Agere Systems Inc.
5
INPUT RETURN LOSS (dB)
A
-2
能源基础设施
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