Preliminary Data Sheet
April 2004
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09070EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured on an advanced LDMOS technology,
offering state-of-the-art performance and reliability.
Packaged in an industry-standard package and
capable of delivering a minimum output power of
70 W, it is ideally suited for today's wireless base
station RF power amplifier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09070EF
Sym
Value
Unit
R
θJC
0.80
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR09070EF
Derate Above 25
°C:
AGR09070EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, +15
I
D
8.5
P
D
—
T
J
219
1.25
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
T
STG
–65, +150 °C
Figure 1. AGR09070EF (flanged) Package
Features
s
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
s
s
s
s
s
s
Typical performance ratings for GSM EDGE
(f = 941 MHz, P
OUT
= 21 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
Typical performance over entire GSM band:
— P1dB: 85 W typ.
— Power gain: @ P1dB = 18.25 dB.
— Efficiency @ P1dB = 56% typ.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
70 W minimum output power.
Table 3. ESD Rating*
AGR09070EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
April 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 200 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 26 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1.0 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 26 V, I
DQ
= 800 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1.0 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Power Gain
(V
DS
= 26 V, P
OUT
= 70 W, I
DQ
= 800 mA)
Drain Efficiency
(V
DS
= 26 V, P
OUT
= P1dB, I
DQ
= 800 mA)
EDGE Linearity Characterization
2
(P
OUT
= 21 W, f = 941 MHz, V
DS
= 26 V, I
DQ
= 800 mA)
Modulation Spectrum @ ±400 kHz
Modulation Spectrum @ ±600 kHz
Output Power
(V
DS
= 26 V, 1 dB gain compression, I
DQ
= 800 mA)
Input VSWR
Ruggedness
(V
DS
= 26 V, P
OUT
= 70 W, I
DQ
= 800 mA, VSWR = 10:1, all angles)
1. Across full GSM band, 921 MHz—960 MHz.
2. Measured according to 3GPP GSM 05.05.
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
Min
65
—
—
—
—
—
—
Typ
—
—
—
6
—
3.6
0.12
Max
—
2.6
8
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
Symbol
C
RSS
C
OSS
Min
—
—
Typ
2.3
48
Max
—
—
Unit
pF
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
1
G
L
η
17
50
18.25
56
—
—
dB
%
—
—
P1dB
VSWR
I
ψ
—
—
70
—
–60
–72
85
1:6
—
—
—
—
dBc
dBc
W
—
No degradation in output
power.
2
Agere Systems Inc.
Preliminary Data Sheet
April 2004
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09070EF
Z15
V
GG
FB1
V
DD
C16 C17 C18 C19 C20
C15 Z14
RF OUTPUT
C11 C12
C13
C14
C10
C9
C8
C7
C6
Z8
Z9
Z10
Z11
Z12
Z13
R1
Z1
RF INPUT
C1
Z2
Z3
Z4
Z5
C3
Z6
Z7
2
1
DUT
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
C2
C4
C5
A. Schematic
Parts List:
s
Microstrip line: Z1 0.431 in. x 0.066 in.; Z2 0.327 in. x 0.066 in.; Z3 0.214 in. x 0.066 in.; Z4 0.285 in. x 0.100 in.; Z5 0.510 in. x 0.530 in.;
Z6 0.107 in. x 0.530 in.; Z7 0.058 in. x 0.530 in.; Z8 0.455 in. x 0.530 in.; Z9 0.132 in. x 0.530 in.; Z10 0.070 in. x 0.530 in.;
Z11 0.535 in. x 0.100 in.; Z12 0.181 in. x 0.100 in.; Z13 0.245 in. x 0.066 in.; Z14 0.315 in. x 0.066 in.; Z15 1.700 in. x 0.050 in.
®
s
ATC
chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.2 pF 100B1R2JW500X; C4, C5, C11, C12: 12 pF 100B120JW500X;
C7, 22 pF 100B220JW500X; C13, 2.7 pF 100B2R7BW500X; C17, 10 pF 100B100JW500X.
®
s
Sprague
tantalum surface-mount chip capacitor: C10, C20 10 µF, 35 V.
®
1206 size chip capacitor: C9, C19: 0.1 µF C1206104K5RAC7800.
s
Kemet
®
s
Murata
0805 size chip capacitor: C8, C18: 0.01 µF GRM40X7R103K100AL.
®
s
Johanson Giga-Trim
variable capacitor: C3, C14: 0.8 pF to 8.0 pF 27271SL.
s
1206 size chip resistor: R1 51
Ω.
®
s
Fair-Rite
ferrite bead: FB1 2743019447.
®
s
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
ε
r = 3.5.
B. Component Layout
Figure 2. AGR09070EF Test Circuit
Agere Systems Inc.
3
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
April 2004
Typical Performance Characteristics
A
RD
U
CT
S
TOW
0.48
IN
D
90
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
±
180
HST
N
GT
-170
E
Z
L
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.48
-90
)
/
Yo
(-jB
CE
0.6
V
EL
-160
-85
N
TA
EP
SC
WA
7
0.4
<Ð
4
0.0
50
-1
-80
V
TI
UC
0.4
0.3
6
-75
5
0.0
5
0.4
X/
40
-1
-70
06
0.
0.6
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f)
921 (f1)
940
960 (f3)
Z
S
Ω
(Complex
Source Impedance)
0.530 – j1.527
0.547 – j1.394
0.508 – j1.240
Z
L
Ω
(Complex
Optimum Load Impedance)
1.774 + j0.257
1.640 + j0.275
1.457 + j0.351
GATE (2)
Z
S
DRAIN (1)
Z
L
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
Agere Systems Inc.
F
0.
32
18
0.
0
-5
-25
44
0
-65
.5
0.
0.3
0.1
3
7
-30
-60
1.8
2.
0
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
NC
EC
OM
0.0
0.4
9
1
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
0.
-20
3.
Z
0
= 4
Ω
O
),
Zo
0
R
0.6
Z
S
D
IN
-15
4.0
0.8
f3
U
ES
f1
5.0
1.
0.2
0
-10
8
0.
10
0.1
0.4
50
20
1.
0
0.2
f3
f1
0.
8
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
L
E
OF
ANG
0.6
0.4
10
0.1
0.
07
-1
30
0.
43
20
50
-20
0.2
2
0.2
8
0.2
1
-30
0.2
0.3
0.2
9
-4
0
0.
19
0.
31
Preliminary Data Sheet
April 2004
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
20.0
AGR09070EF; V
DD
= 26 V; FREQUENCY = 940.5 MHz
TYPICAL DATA
19.5
I
DQ
= 1000 mA
I
DQ
= 1100 mA
POWER GAIN (dB)Z
19.0
18.5
18.0
I
DQ
= 900 mA
I
DQ
= 800 mA
17.5
I
DQ
= 700 mA
17.0
0
5
10
15
20
25
30
35
40
45
55 60
P
OUT
(W)Z
50
65
70
75
80
85
90
95 100 105
Figure 4. Power Gain vs. P
OUT
AGR09070EF; FREQUENCY = 940.5 MHz
V
DD
= 26 V; I
DQ
= 800 mA
-40
-30
TYPICAL DATA
MODULATION SPECTRUM (dBc)Z
-50
EDGE FORMAT: 3GPP GSM 05.05
RES BW: 30 kHz
VIDEO BW: 300 Hz
±400 kHz
-60
-70
-80
±600 kHz
-90
-100
30
31
32
33
34
35
36
38
39
P
OUT
(dBm)Z
37
40
41
42
43
44
45
Figure 5. Modulation Spectrum vs. P
OUT
Agere Systems Inc.
5
Microchip MCU
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