Small Signal Field-Effect Transistor, 0.03A I(D), 200V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Supertex |
| 零件包装代码 | DIP |
| 包装说明 | IN-LINE, R-PDIP-T18 |
| 针数 | 18 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 配置 | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (Abs) (ID) | 0.03 A |
| 最大漏极电流 (ID) | 0.03 A |
| 最大漏源导通电阻 | 300 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 1.5 pF |
| JESD-30 代码 | R-PDIP-T18 |
| JESD-609代码 | e0 |
| 元件数量 | 8 |
| 端子数量 | 18 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 1.5 W |
| 最大功率耗散 (Abs) | 1.5 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| AN0120NA | AN0116WG | AN0116NA | AN0116NB | AN0116ND | AN0120NB | AN0120ND | |
|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.03A I(D), 200V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-18 | Small Signal Field-Effect Transistor, 0.03A I(D), 160V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SO-20 | Small Signal Field-Effect Transistor, 0.03A I(D), 160V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-18 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 160V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-17 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 200V, 8-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-17 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | IN-LINE, R-PDIP-T18 | SMALL OUTLINE, R-PDSO-G20 | PLASTIC, DIP-18 | , | DIE-17 | , | DIE-17 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最大漏极电流 (Abs) (ID) | 0.03 A | 0.03 A | 0.03 A | 0.04 A | 0.03 A | 0.04 A | 0.03 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 表面贴装 | NO | YES | NO | NO | YES | NO | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 厂商名称 | Supertex | - | Supertex | Supertex | Supertex | Supertex | Supertex |
| 零件包装代码 | DIP | SOT | DIP | - | DIE | - | DIE |
| 针数 | 18 | 20 | 18 | - | 17 | - | 17 |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 | - | EAR99 |
| 配置 | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | - | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | - | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 160 V | 160 V | - | 160 V | - | 200 V |
| 最大漏源导通电阻 | 300 Ω | 350 Ω | 350 Ω | - | 350 Ω | - | 300 Ω |
| 最大反馈电容 (Crss) | 1.5 pF | 1.5 pF | 1.5 pF | - | 1.5 pF | - | 1.5 pF |
| JESD-30 代码 | R-PDIP-T18 | R-PDSO-G20 | R-PDIP-T18 | - | S-XUUC-N17 | - | S-XUUC-N17 |
| 元件数量 | 8 | 8 | 8 | - | 8 | - | 8 |
| 端子数量 | 18 | 20 | 18 | - | 17 | - | 17 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | UNSPECIFIED | - | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | SQUARE | - | SQUARE |
| 封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | - | UNCASED CHIP | - | UNCASED CHIP |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED |
| 最大功率耗散 (Abs) | 1.5 W | 1.4 W | 1.5 W | 2 W | - | 2 W | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | - | Not Qualified |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | - | NO LEAD | - | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | - | UPPER | - | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | - | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | - | SILICON |
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