Static Column DRAM, 256KX1, 80ns, CMOS, CDIP16,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Inmos Corporation |
Reach Compliance Code | unknown |
Is Samacsys | N |
最长访问时间 | 80 ns |
I/O 类型 | SEPARATE |
JESD-30 代码 | R-XDIP-T16 |
JESD-609代码 | e0 |
内存密度 | 262144 bit |
内存集成电路类型 | STATIC COLUMN DRAM |
内存宽度 | 1 |
端子数量 | 16 |
字数 | 262144 words |
字数代码 | 256000 |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256KX1 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC |
封装代码 | DIP |
封装等效代码 | DIP16,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
电源 | 5 V |
认证状态 | Not Qualified |
刷新周期 | 256 |
最大待机电流 | 0.0025 A |
最大压摆率 | 0.06 mA |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
Base Number Matches | 1 |
IMS2800S-80 | IMS2800S-70 | IMS2800S-120 | IMS2800S-150 | RNR55E2641BS | RNR55E2641BSBSL65 | |
---|---|---|---|---|---|---|
描述 | Static Column DRAM, 256KX1, 80ns, CMOS, CDIP16, | Static Column DRAM, 256KX1, 70ns, CMOS, CDIP16, | Static Column DRAM, 256KX1, 120ns, CMOS, CDIP16, | Static Column DRAM, 256KX1, 150ns, CMOS, CDIP16, | RESISTOR, METAL FILM, 0.1 W, 0.1 %, 25 ppm, 2640 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | Fixed Resistor, Metal Film, 0.1W, 2640ohm, 200V, 0.1% +/-Tol, 25ppm/Cel, Through Hole Mount, AXIAL LEADED |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | unknown | unknown | unknown | compliant | compliant |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
端子数量 | 16 | 16 | 16 | 16 | 2 | 2 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 175 °C | 175 °C |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | Axial | Axial |
表面贴装 | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | METAL FILM | METAL FILM |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
厂商名称 | Inmos Corporation | Inmos Corporation | Inmos Corporation | Inmos Corporation | - | - |
Is Samacsys | N | N | N | N | - | - |
最长访问时间 | 80 ns | 70 ns | 120 ns | 150 ns | - | - |
I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | - | - |
JESD-30 代码 | R-XDIP-T16 | R-XDIP-T16 | R-XDIP-T16 | R-XDIP-T16 | - | - |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | - | - |
内存集成电路类型 | STATIC COLUMN DRAM | STATIC COLUMN DRAM | STATIC COLUMN DRAM | STATIC COLUMN DRAM | - | - |
内存宽度 | 1 | 1 | 1 | 1 | - | - |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | - | - |
字数代码 | 256000 | 256000 | 256000 | 256000 | - | - |
组织 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | - | - |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | - |
封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | - | - |
封装代码 | DIP | DIP | DIP | DIP | - | - |
封装等效代码 | DIP16,.3 | DIP16,.3 | DIP16,.3 | DIP16,.3 | - | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | TUBULAR PACKAGE | - |
电源 | 5 V | 5 V | 5 V | 5 V | - | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - |
刷新周期 | 256 | 256 | 256 | 256 | - | - |
最大待机电流 | 0.0025 A | 0.0025 A | 0.0025 A | 0.0025 A | - | - |
最大压摆率 | 0.06 mA | 0.06 mA | 0.045 mA | 0.045 mA | - | - |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | - |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | - |
端子位置 | DUAL | DUAL | DUAL | DUAL | - | - |
Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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