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IS41C16256-50T: 产品描述EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40; 产品类别存储存储; 文件大小201KB，共19页; 制造商Integrated Silicon Solution ( ISSI )

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IS41C16256-50T概述

EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40

IS41C16256-50T规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2, TSOP40/44,.46,32
针数	44
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Is Samacsys	N
访问模式	FAST PAGE WITH EDO
最长访问时间	50 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G40
JESD-609代码	e0
长度	18.41 mm
内存密度	4194304 bit
内存集成电路类型	EDO DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	40
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP40/44,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
刷新周期	512
座面最大高度	1.2 mm
自我刷新	NO
最大待机电流	0.002 A
最大压摆率	0.18 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm
Base Number Matches	1

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IS41C16256

IS41LV16256

256K x 16 (4-MBIT) DYNAMIC RAM

WITH EDO PAGE MODE

FEATURES

•

Extended Data-Out (EDO) Page Mode access cycle

TTL compatible inputs and outputs

Refresh Interval: 512 cycles/8 ms

Refresh Mode :

RAS

-Only,

CAS

-before-

RAS

(CBR),

and Hidden

• JEDEC standard pinout

• Single power supply

10% (IS41C16256)

3.3V

10% (IS41LV16256)

• Byte Write and Byte Read operation via two

CAS

• Industrail temperature available -40

°C

to 85°C

ISSI

May 1999

DESCRIPTION

The

ISSI

IS41C16256 and IS41LV16257 is a 262,144 x 16-

bit high-performance CMOS Dynamic Random Access

Memory. The IS41C16256 offers an accelerated cycle access

called EDO Page Mode. EDO Page Mode allows 512 random

accesses within a single row with access cycle time as short

as 10 ns per 16-bit word. The Byte Write control, of upper and

lower byte, makes the IS41C16256 ideal for use in 16-, 32-bit

wide data bus systems.

These features make the IS41C16256 and IS41LV1626 ide-

ally suited for high band-width graphics, digital signal process-

ing, high-performance computing systems, and peripheral

applications.

The IS41C16256 is packaged in a 40-pin 400-mil SOJ and

TSOP (Type II).

KEY TIMING PARAMETERS

Parameter

Max.

RAS

Access Time (t

RAC

)

Max.

CAS

Access Time (t

CAC

)

Max. Column Address Access Time (t

)

Min. EDO Page Mode Cycle Time (t

)

Min. Read/Write Cycle Time (t

)

-25

(5V,SOJ)

-35

-50

-60

110

Unit

PIN CONFIGURATIONS

40-Pin TSOP (Type II)

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

40-Pin SOJ

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

LCAS

UCAS

GND

PIN DESCRIPTIONS

A0-A8

I/O0-15

Address Inputs

Data Inputs/Outputs

Write Enable

Output Enable

Row Address Strobe

Upper Column Address Strobe

Lower Column Address Strobe

Power

Ground

No Connection

RAS

VCC

LCAS

UCAS

GND

RAS

VCC

RAS

UCAS

LCAS

Vcc

GND

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

Integrated Silicon Solution, Inc. — 1-800-379-4774

DR001-1I

05/27/99

IS41C16256-50T相似产品对比

	IS41C16256-50T	IS41LV16256-50KI	IS41C16256-50K	IS41C16256-35TI	IS41LV16256-50TI	IS41C16256-35KI	IS41LV16256-35KI	IS41LV16256-35TI
描述	EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40	EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, SOJ-40	EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, SOJ-40	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40	EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, SOJ-40	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, SOJ-40	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	TSOP2	SOJ	SOJ	TSOP2	TSOP2	SOJ	SOJ	TSOP2
包装说明	TSOP2, TSOP40/44,.46,32	SOJ,	SOJ, SOJ40,.44	TSOP2, TSOP40/44,.46,32	TSOP2,	0.400 INCH, SOJ-40	0.400 INCH, SOJ-40	0.400 INCH, TSOP2-40
针数	44	40	40	44	40	40	40	40
Reach Compliance Code	not_compliant	_compli	not_compliant	not_compliant	not_compliant	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	50 ns	50 ns	50 ns	35 ns	50 ns	35 ns	35 ns	35 ns
JESD-30 代码	R-PDSO-G40	R-PDSO-J40	R-PDSO-J40	R-PDSO-G40	R-PDSO-G40	R-PDSO-J40	R-PDSO-J40	R-PDSO-G40
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	18.41 mm	26.035 mm	26.035 mm	18.41 mm	18.41 mm	26.035 mm	26.035 mm	18.41 mm
内存密度	4194304 bit	4194304 bi	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
内存宽度	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	40	40	40	40	40	40	40	40
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	SOJ	SOJ	TSOP2	TSOP2	SOJ	SOJ	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	3.7592 mm	3.7592 mm	1.2 mm	1.2 mm	3.7592 mm	3.7592 mm	1.2 mm
最大供电电压 (Vsup)	5.5 V	3.6 V	5.5 V	5.5 V	3.6 V	5.5 V	3.6 V	3.6 V
最小供电电压 (Vsup)	4.5 V	3 V	4.5 V	4.5 V	3 V	4.5 V	3 V	3 V
标称供电电压 (Vsup)	5 V	3.3 V	5 V	5 V	3.3 V	5 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	J BEND	J BEND	GULL WING	GULL WING	J BEND	J BEND	GULL WING
端子节距	0.8 mm	1.27 mm	1.27 mm	0.8 mm	0.8 mm	1.27 mm	1.27 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
厂商名称	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Base Number Matches	1	1	1	1	1	-	-	-

IS41C16256-50T

IS41C16256-50T概述

IS41C16256-50T规格参数

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IS41C16256-50T相似产品对比

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