IS41C4400
X
IS41LV4400
X
S
ERIES
4M x 4 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
•
Extended Data-Out (EDO) Page Mode access cycle
•
TTL compatible inputs and outputs
•
Refresh Interval:
– 2,048 cycles/32 ms
– 4,096 cycles/64 ms
ISSI
SEPTEMBER 2000
®
DESCRIPTION
The
ISSI
4400 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 or 4096
random accesses within a single row with access cycle
time as short as 20 ns per 4-bit word.
These features make the 4400 Series ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The 4400 Series is packaged in a 24-pin 300-mil SOJ and
a 24-pin TSOP (Type II) with JEDEC standard pinouts.
•
Refresh Mode:
RAS-Only,
CAS-before-RAS
(CBR), and Hidden
•
Single power supply:
– 5V±10% or 3.3V ± 10%
•
Byte Write and Byte Read operation via two
CAS
•
Industrial temperature range -40°C to 85°C
PRODUCT SERIES OVERVIEW
Part No.
IS41C44002
IS41C44004
IS41LV44002
IS41LV44004
Refresh
2K
4K
2K
4K
Voltage
5V ± 10%
5V ± 10%
3.3V ± 10%
3.3V ± 10%
KEY TIMING PARAMETERS
Parameter
RAS
Access Time (t
RAC
)
CAS
Access Time (t
CAC
)
Column Address Access Time (t
AA
)
EDO Page Mode Cycle Time (t
PC
)
Read/Write Cycle Time (t
RC
)
-50
50
13
25
20
84
-60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATION
24 Pin SOJ, TSOP (Type II)
PIN DESCRIPTIONS
A0-A11
Address Inputs (4K Refresh)
Address Inputs (2K Refresh)
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
24
23
22
21
20
19
18
17
16
15
14
13
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
VCC
I/O0
I/O1
WE
RAS
*A11(NC)
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
A0-A10
I/O0-3
WE
OE
RAS
CAS
Vcc
GND
NC
* A11 is NC for 2K Refresh devices
.
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
09/29/00
1
IS41C4400
X
IS41LV4400
X
S
ERIES
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
OE
ISSI
®
CAS
CAS
WE
RAS
RAS
CLOCK
GENERATOR
DATA I/O BUS
REFRESH
COUNTER
DATA I/O BUFFERS
ROW DECODER
RAS
COLUMN DECODERS
SENSE AMPLIFIERS
I/O0-I/O3
MEMORY ARRAY
4,194,304 x 4
ADDRESS
BUFFERS
A0-A10(A11)
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
EDO Page-Mode Read
1st Cycle:
2nd Cycle:
EDO Page-Mode Write
1st Cycle:
2nd Cycle:
EDO Page-Mode
1st Cycle:
Read-Write
2nd Cycle:
Hidden Refresh
Read
Write
(1)
RAS-Only
Refresh
CBR Refresh
Note:
1. EARLY WRITE only.
RAS
H
L
L
L
L
L
L
L
L
L
L→H→L
L→H→L
L
H→L
CAS
H
L
L
L
H→L
H→L
H→L
H→L
H→L
H→L
L
L
H
L
WE
X
H
L
H→L
H
H
L
L
H→L
H→L
H
L
X
X
OE
X
L
X
L→H
L
L
X
X
L→H
L→H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
D
OUT
D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
09/29/00
IS41C4400
X
IS41LV4400
X
S
ERIES
Functional Description
The IS41C4400x and IS41LV4400x are CMOS
DRAMs optimized for high-speed bandwidth, low
power applications. During READ or WRITE cycles, each
bit is uniquely addressed through the 11 or 12 address
bits. These are entered 11 bits (A0-A10) at a time for the
2K refresh device or 12 bits (A0-A11) at a time for the 4K
refresh device. The row address is latched by the Row
Address Strobe (RAS). The column address is latched by
the Column Address Strobe (CAS).
RAS
is used to latch
the first nine bits and
CAS
is used the latter ten bits.
ISSI
Auto Refresh Cycle
®
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in
each 64ms period. There are two ways to refresh the
memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through
A11) with RAS at least once every 32 ms or 64ms
respectively. Any read, write, read-modify-write or
RAS-only cycle refreshes the addressed row.
2. Using a
CAS-before-RAS
refresh cycle.
CAS-before-RAS
refresh is activated by the falling edge of
RAS,
while
holding
CAS
LOW. In
CAS-before-RAS
refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.
CAS-before-RAS
is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Memory Cycle
A memory cycle is initiated by bring
RAS
LOW and it is
terminated by returning both
RAS
and
CAS
HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
RAS
time has expired. A new
cycle must not be initiated until the minimum precharge
time t
RP
, t
CP
has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of
CAS
or
OE,
whichever occurs last, while holding
WE
HIGH. The
column address must be held for a minimum time
specified by t
AR
. Data Out becomes valid only when t
RAC
,
t
AA
, t
CAC
and t
OEA
are all satisfied. As a result, the access
time is dependent on the timing relationships between
these parameters.
Power-On
After application of the V
CC
supply, an initial pause of 200
µs is required followed by a minimum of eight initialization
cycles (any combination of cycles containing a
RAS
signal).
During power-on, it is recommended that
RAS
track with
V
CC
or be held at a valid V
IH
to avoid current surges.
Write Cycle
A write cycle is initiated by the falling edge of
CAS
and
WE,
whichever occurs last. The input data must be valid
at or before the falling edge of
CAS
or
WE,
whichever
occurs last.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
09/29/00
3
IS41C4400
X
IS41LV4400
X
S
ERIES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
T
V
CC
I
OUT
P
D
T
A
T
STG
Parameters
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operation Temperature
Storage Temperature
5V
3.3V
5V
3.3V
Rating
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
-40 to +85
–55 to +125
Unit
V
V
mA
W
°C
°C
ISSI
®
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
V
CC
V
IH
V
IL
T
A
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
-40
Typ.
5.0
3.3
—
—
—
—
—
—
Max.
5.5
3.6
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE
(1,2)
Symbol
C
IN
1
C
IN
2
C
IO
Parameter
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O3
Max.
5
7
7
Unit
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
09/29/00
IS41C4400
X
IS41LV4400
X
S
ERIES
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
I
IL
I
IO
V
OH
V
OL
I
CC
1
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Standby Current: TTL
Test Condition
Any input 0V
≤
V
IN
≤
Vcc
Other inputs not under test = 0V
Output is disabled (Hi-Z)
0V
≤
V
OUT
≤
Vcc
I
OH
= –5.0 mA, Vcc = 5V
I
OH
= –2.0 mA, Vcc = 3.3V
I
OL
= 4.2 mA, Vcc = 5V
I
OL
= 2 mA, Vcc = 3.3V
RAS, CAS
≥
V
IH
Commercial
Industrial
I
CC
2
I
CC
3
Standby Current: CMOS
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
Refresh Current:
RAS-Only
(2,3)
Average Power Supply Current
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS, CAS
≥
V
CC
– 0.2V
RAS, CAS,
Address Cycling, t
RC
= t
RC
(min.)
RAS
= V
IL
,
CAS,
Cycling t
PC
= t
PC
(min.)
RAS
Cycling,
CAS
≥
V
IH
t
RC
= t
RC
(min.)
RAS, CAS
Cycling
t
RC
= t
RC
(min.)
5V
3.3V
5V
3.3V
5V
3.3V
-50
-60
-50
-60
-50
-60
-50
-60
V
CC
Speed
Min.
–5
–5
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ISSI
Max.
5
5
—
0.4
2
0.5
3
2
1
0.5
120
110
90
80
120
110
120
110
µA
µA
V
V
®
Unit
mA
mA
mA
I
CC
4
mA
I
CC
5
mA
I
CC
6
mA
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight
RAS
refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
09/29/00
5
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