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IS62C1024-45WI: 产品描述Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32; 产品类别存储存储; 文件大小65KB，共8页; 制造商Integrated Silicon Solution ( ISSI )

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IS62C1024-45WI概述

Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32

IS62C1024-45WI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	DIP
包装说明	0.600 INCH, PLASTIC, DIP-32
针数	32
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
最长访问时间	45 ns
I/O 类型	COMMON
JESD-30 代码	R-PDIP-T32
JESD-609代码	e0
长度	41.91 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX8
输出特性	3-STATE
可输出	YES
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP32,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
座面最大高度	4.572 mm
最大待机电流	0.04 A
最小待机电流	4.5 V
最大压摆率	0.145 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	15.24 mm
Base Number Matches	1

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IS62C1024

128K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time: 35, 45, 55, 70 ns

•

Low active power: 450 mW (typical)

•

Low standby power: 500

µW

(typical) CMOS

standby

• Output Enable (

) and two Chip Enable

(

CE1

and CE2) inputs for ease in applications

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V (±10%) power supply

IS62C1024

ISSI

JULY 1996

DESCRIPTION

The

ISSI

IS62C1024 is a low power,131,072-word by 8-bit

CMOS static RAM. It is fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields higher

performance and low power consumption devices.

When

CE1

is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation can

be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable

inputs,

CE1

and CE2. The active LOW Write Enable (

)

controls both writing and reading of the memory.

The IS62C1024 is available in 32-pin 600-mil plastic DIP, 525-

mil plastic SOP and TSOP (type 1) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

512 X 2048

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CE1

CE2

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

Integrated Silicon Solution, Inc.

Rev. F 0796

SR81995C024

IS62C1024-45WI相似产品对比

	IS62C1024-45WI	IS62C1024-70WI	IS62C1024-35W	IS62C1024-35WI	IS62C1024-45W	IS62C1024-55WI	IS62C1024-55W
描述	Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 70ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
包装说明	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32	0.600 INCH, PLASTIC, DIP-32
针数	32	32	32	32	32	32	32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	45 ns	70 ns	35 ns	35 ns	45 ns	55 ns	55 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32	R-PDIP-T32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	41.91 mm	41.91 mm	41.91 mm	41.91 mm	41.91 mm	41.91 mm	41.91 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-	-40 °C	-
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
封装等效代码	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.572 mm	4.572 mm	4.572 mm	4.572 mm	4.572 mm	4.572 mm	4.572 mm
最大待机电流	0.04 A	0.04 A	0.03 A	0.04 A	0.03 A	0.04 A	0.03 A
最小待机电流	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
最大压摆率	0.145 mA	0.1 mA	0.15 mA	0.16 mA	0.135 mA	0.13 mA	0.12 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm
Is Samacsys	N	N	N	N	N	N	-
Base Number Matches	1	1	1	1	1	1	-

IS62C1024-45WI

IS62C1024-45WI概述

IS62C1024-45WI规格参数

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IS62C1024-45WI相似产品对比

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