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IS41C16105-60TLI: 产品描述Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50/44; 产品类别存储存储; 文件大小144KB，共21页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS41C16105-60TLI概述

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50/44

IS41C16105-60TLI规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2, TSOP44/50,.46,32
针数	50
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
访问模式	FAST PAGE WITH EDO
最长访问时间	60 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G44
JESD-609代码	e3
长度	20.95 mm
内存密度	16777216 bit
内存集成电路类型	FAST PAGE DRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	44
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP44/50,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
电源	5 V
认证状态	Not Qualified
刷新周期	1024
座面最大高度	1.2 mm
自我刷新	NO
最大待机电流	0.002 A
最大压摆率	0.145 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
宽度	10.16 mm
Base Number Matches	1

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IS41C16105

IS41LV16105

1M x 16 (16-MBIT) DYNAMIC RAM

WITH FAST PAGE MODE

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— 1,024 cycles/16 ms

• Refresh Mode:

—

RAS-Only, CAS-before-RAS

(CBR), and Hidden

• JEDEC standard pinout

• Single power supply:

— 5V ± 10% (IS41C16105)

— 3.3V ± 10% (IS41LV16105)

• Byte Write and Byte Read operation via two

CAS

• Extended Temperature Range -30

C to 85

• Industrial Temperature Range -40

C to 85

• Lead-free available

Parameter

Max.

RAS

Access Time (t

RAC

)

Max.

CAS

Access Time (t

CAC

)

ISSI

DECEMBER 2005

DESCRIPTION

The

ISSI

IS41C16105 and IS41LV16105 are 1,048,576 x

16-bit high-performance CMOS Dynamic Random Access Memo-

ries. Fast Page Mode allows 1,024 random accesses within a single

row with access cycle time as short as 20 ns per 16-bit word. The

Byte Write control, of upper and lower byte, makes the IS41C16105

ideal for use in 16-, 32-bit wide data bus systems.

These features make the IS41C16105 and IS41LV16105 ideally

suited for high-bandwidth graphics, digital signal processing, high-

performance computing systems, and peripheral applications.

The IS41C16105 and IS41LV16105 are packaged in a

42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).

KEY TIMING PARAMETERS

-50

-60

104

Unit

PIN CONFIGURATIONS

44(50)-Pin TSOP (Type II)

42-Pin SOJ

Max. Column Address Access Time (t

)

Min. Fast Page Mode Cycle Time (t

)

Min. Read/Write Cycle Time (t

)

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

RAS

VCC

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

LCAS

UCAS

GND

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

RAS

VCC

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

LCAS

UCAS

GND

PIN DESCRIPTIONS

A0-A9

I/O0-15

RAS

UCAS

LCAS

Vcc

GND

Address Inputs

Data Inputs/Outputs

Write Enable

Output Enable

Row Address Strobe

Upper Column Address Strobe

Lower Column Address Strobe

Power

Ground

No Connection

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

12/05/05

IS41C16105-60TLI相似产品对比

	IS41C16105-60TLI	IS41C16105-60KLE	IS41C16105-60KLI	IS41C16105-50KLI
描述	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50/44	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42
是否Rohs认证	符合	符合	符合	符合
零件包装代码	TSOP2	SOJ	SOJ	SOJ
包装说明	TSOP2, TSOP44/50,.46,32	SOJ, SOJ42,.44	SOJ, SOJ42,.44	SOJ, SOJ42,.44
针数	50	42	42	42
Reach Compliance Code	compliant	compli	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	60 ns	60 ns	60 ns	50 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G44	R-PDSO-J42	R-PDSO-J42	R-PDSO-J42
JESD-609代码	e3	e3	e3	e3
长度	20.95 mm	27.305 mm	27.305 mm	27.305 mm
内存密度	16777216 bit	16777216 bi	16777216 bit	16777216 bit
内存集成电路类型	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM
内存宽度	16	16	16	16
湿度敏感等级	3	3	3	3
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	44	42	42	42
字数	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-30 °C	-40 °C	-40 °C
组织	1MX16	1MX16	1MX16	1MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	SOJ	SOJ	SOJ
封装等效代码	TSOP44/50,.46,32	SOJ42,.44	SOJ42,.44	SOJ42,.44
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260	260
电源	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	1024	1024	1024	1024
座面最大高度	1.2 mm	3.75 mm	3.75 mm	3.75 mm
自我刷新	NO	NO	NO	NO
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A
最大压摆率	0.145 mA	0.145 mA	0.145 mA	0.16 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	OTHER	INDUSTRIAL	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed
端子形式	GULL WING	J BEND	J BEND	J BEND
端子节距	0.8 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	40	40	40	40
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Base Number Matches	1	1	1	1
厂商名称	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Is Samacsys	N	-	N	N

IS41C16105-60TLI

IS41C16105-60TLI概述

IS41C16105-60TLI规格参数

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