DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGY785AD/8M
860 MHz, 18.5 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Mar 27
2001 Nov 15
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain push-pull amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz frequency
range.
DESCRIPTION
Hybrid high dynamic range cascode amplifier module with
Darlington pre-stage dies in a SOT115J package,
operating at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
BGY785AD/8M
DESCRIPTION
handbook, halfpage
1
2
3
8
5 7 9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 870 MHz
V
B
= 24 V
18
18.5
−
MIN.
19
−
265
MAX.
dB
dB
mA
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−40
−20
MIN.
60
+100
+100
MAX.
°C
°C
UNIT
dBmV
2001 Nov 15
2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain push-pull amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 870 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 50 MHz
f = 870 MHz
SL
FL
s
11
f = 40 to 870 MHz
f = 40 to 870 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 870 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 870 MHz
s
21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
f = 50 MHz
CONDITIONS
BGY785AD/8M
SYMBOL
G
p
MIN.
18
18.5
0.2
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
−
2
MAX.
19
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
±0.5
−
−
−
−
−
−
−
−
−
−
225
−58
−56
−58
−68
−
5.5
5.5
5.5
6
6.5
265
110 channels flat, note 1;
−
V
o
= 44 dBmV; measured at 745.25 MHz
110 channels flat, note 1;
V
o
= 44 dBmV; measured at 55.25 MHz
110 channels flat, note 1
V
o
= 44 dBmV; measured at 746.5 MHz
notes 1 and 2
d
im
=
−60
dB; notes 1 and 3
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 870 MHz
−
−
−
61
−
−
−
−
−
−
I
tot
Notes
total current consumption (DC)
note 4
1. Linearity guaranteed up to 750 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
3. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
4. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 15
3
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain push-pull amplifier
Table 2
Bandwidth 40 to 650 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 650 MHz
SL
FL
s
11
f = 40 to 650 MHz
f = 40 to 650 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
94 channels flat, note 1;
V
o
= 44 dBmV;
measured at 649.25 MHz
94 channels flat, note 1;
V
o
= 44 dBmV;
measured at 55.25 MHz
94 channels flat, note 1;
V
o
= 44 dBmV;
measured at 650.5 MHz
notes 1 and 2
d
im
=
−60
dB; notes 1 and 3
see Table 1
note 4
BGY785AD/8M
SYMBOL
G
p
MIN.
18
18.5
0.2
−
20
18.5
17
16
20
18.5
17
16
135
−
−
2
MAX.
19
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
±0.4
−
−
−
−
−
−
−
−
225
−62
X
mod
cross modulation
−
−57
dB
CSO
composite second order distortion
−
−60
dB
d
2
V
o
F
I
tot
Notes
second order distortion
output voltage
noise figure
total current consumption (DC)
−
63
−
−
−70
−
−
265
dB
dBmV
dB
mA
1. Linearity guaranteed up to 750 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 595.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 650.5 MHz.
3. Measured according to DIN45004B:
f
p
= 640.25 MHz; V
p
= V
o
; f
q
= 647.25 MHz; V
q
= V
o
−6
dB; f
r
= 649.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 638.25 MHz.
4. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 15
4
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain push-pull amplifier
Table 3
Bandwidth 40 to 550 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 550 MHz
SL
FL
s
11
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
77 channels flat, note 1;
V
o
= 44 dBmV;
measured at 547.25 MHz
77 channels flat, note 1;
V
o
= 44 dBmV;
measured at 55.25 MHz
77 channels flat, note 1;
V
o
= 44 dBmV;
measured at 548.5 MHz
notes 1 and 2
d
im
=
−60
dB; notes 1 and 3
see Table 1
note 4
BGY785AD/8M
SYMBOL
G
p
MIN.
18
18.5
0.2
−
20
18.5
17
16
20
18.5
17
16
135
−
−
2
MAX.
19
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
±0.3
−
−
−
−
−
−
−
−
225
−65
X
mod
cross modulation
−
−59
dB
CSO
composite second order distortion
−
−62
dB
d
2
V
o
F
I
tot
Notes
second order distortion
output voltage
noise figure
total current consumption (DC)
−
64.5
−
−
−72
−
−
265
dB
dBmV
dB
mA
1. Linearity guaranteed up to 750 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 493.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
3. Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
−6
dB; f
r
= 549.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
4. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 15
5
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