j£ii£u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Thyristors
BT151-500R
mm
APPLICATIONS
• For use in applications requiring high
bidirectional blocking voltage capability
and high thermal cycling performance.
Typical applications include motor co-
ntrol, industrial and domestic lighting,
heating and static switching.
KAG
1 cathode
2 anode
3 gate
506
DIM M1N
H
MAX
A 15.70 15.90
B
9.90 10.10
C
4.20 4.40
D
0.70 0.90
3.40 3.60
F
G
4.98 5.18
2.70 2.90
H
J
0.44 0.46
K 13.20 13.40
1.30
1.10
L
0
2.70 2.90
2.50 2.70
R
S
1.29
1.31
U
6.45 6.65
8.66 8.86
V
ABSOLUTE MAXIMUM RATINGS(T
a
=25^C)
SYMBOL
PARAMETER
MIN
500
500
7.5
12
120
5
0.5
125
UNIT
V
V
A
A
A
W
W
°C
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-stage current
RMS on-state current
Surge non-repetitive on-state current
Peak gate power dissipation
Average gate power dissipation
Operating junction temperature
Storage temperature
IT(AV)
Ij(RMS)
ITSM
PGM
PG(AV)
Tj
Tstg
-45-150
°c
ELECTRICAL CHARACTERISTICS
(Jd=2B'C
unless otherwise specified)
SYMBOL
IRRM
IDRM
PARAMETER
CONDITIONS
VRM=VRRM,
VRM=V
R
R
M
,Tj=125°C
VDM=VDRM,
V
DM
=V
D
R
M
,Tj=125°C
MIN
MAX
UNIT
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate-trigger current
Gate-trigger voltage
Holding current
Thermal resistance
0.02
0.5
0.02
0.5
1.75
8
1.5
20
1.6
mA
mA
V
mA
V
mA
°C/W
V
TM
IGT
V
GT
!TM= 23A
V
D
=12V; I
T
=0.1A
V
D
=12V;I
T
=0.1A
V
D
= 12V; I
T
=0.1A
Junction to case
IH
Rthfl-c)
Quality Semi-Conductors
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