BT136S-600D
4Q Triac
30 September 2013
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK)
surface-mountable plastic package intended for use in general purpose bidirectional
switching and phase control applications, where high sensitivity is required in all four
quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
2.5
5
mA
-
2
5
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
25
4
Unit
V
A
A
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AK
NXP Semiconductors
BT136S-600D
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
2.5
5
1.2
Max
5
10
10
Unit
mA
mA
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
[1]
gate
mounting base; connected to
main terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
6. Ordering information
Table 3.
Ordering information
Package
Name
BT136S-600D
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BT136S-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
2 / 14
NXP Semiconductors
BT136S-600D
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms;
Fig. 4; Fig. 5
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
4
25
27
3.1
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT136S-600D
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© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
3 / 14
NXP Semiconductors
BT136S-600D
4Q Triac
5
I
T(RMS)
(A)
4
003aae828
I
T(RMS)
(A)
10
8
12
003aae830
3
6
2
4
1
2
0
10
- 2
0
- 50
0
50
100
T
mb
(°C)
150
10
- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
8
f = 50 Hz
T
mb
≤ 107 °C
RMS on-state current as a function of surge
duration; maximum values
003aae827
P
tot
(W)
conduction
form
angle
factor
(degrees)
a
30
4
6
60
2.8
90
2.2
120
1.9
180
1.57
α
α = 180°
120°
90°
60°
30°
4
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT136S-600D
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© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
4 / 14
NXP Semiconductors
BT136S-600D
4Q Triac
10
3
003aae829
I
T
I
TSM
(A)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
- 5
10
- 4
10
- 3
10
- 2
t
p
(s)
10
- 1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
30
003aae831
I
TSM
(A)
25
20
15
10
5
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT136S-600D
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
5 / 14
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