IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA225B-800B
3Q Hi-Com Triac
6 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface
mountable plastic package intended for use in circuits where high static and dynamic dV/
dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current
at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
•
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 91 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
2
18
50
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
190
25
Unit
V
A
A
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D2
PA
K
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
Typ
21
34
Max
50
50
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA225B-800B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BTA225B-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
6 August 2014
2 / 14
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 91 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
100
I
T(RMS)
(A)
80
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
25
190
209
180
100
2
5
0.5
150
125
003aae170
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 30 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aae172
I
T(RMS)
(A)
30
25
20
91 °C
60
15
40
10
20
5
0
-50
0
10
-2
10
-1
1
10
surge duration (s)
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 91 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BTA225B-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
6 August 2014
3 / 14
NXP Semiconductors
BTA225B-800B
3Q Hi-Com Triac
40
P
tot
(W)
30
003aae173
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
85
T
mb(max)
(°C)
95
α
=
180°
120°
90 °
60°
30°
20
105
10
115
0
0
5
10
15
20
25
I
T(RMS)
(A)
125
30
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
10
3
I
TSM
(A)
Total power dissipation as a function of RMS on-state current; maximum values
003aae174
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA225B-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
6 August 2014
4 / 14
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