AF8958CNA,AF8958CNA pdf中文资料,AF8958CNA引脚图,AF8958CNA电路-Datasheet-电子工程世界

AF8958CNA: 产品描述Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8; 产品类别分立半导体晶体管; 文件大小713KB，共9页; 制造商Integrated Circuit Systems（IDT ）

下载文档详细参数选型对比全文预览

AF8958CNA概述

Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8

AF8958CNA规格参数

参数名称	属性值
厂商名称	Integrated Circuit Systems（IDT ）
零件包装代码	DIP
包装说明	IN-LINE, R-PDIP-T8
针数	8
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (ID)	7 A
最大漏源导通电阻	0.028 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDIP-T8
元件数量	2
端子数量	8
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM)	20 A
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

AF8958CNA相似产品对比

	AF8958CNA	AF8958CNL	AF8958CN	AF8958CSA	AF8958CSLA	AF8958CNLA	AF8958CSL	AF8958CS
描述	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
厂商名称	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）
零件包装代码	DIP	DIP	DIP	SOT	SOT	DIP	SOT	SOT
包装说明	IN-LINE, R-PDIP-T8	IN-LINE, R-PDIP-T8	IN-LINE, R-PDIP-T8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	IN-LINE, R-PDIP-T8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
针数	8	8	8	8	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N	N	N	N
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
最大漏极电流 (ID)	7 A	7 A	7 A	7 A	7 A	7 A	7 A	7 A
最大漏源导通电阻	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8
元件数量	2	2	2	2	2	2	2	2
端子数量	8	8	8	8	8	8	8	8
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM)	20 A	20 A	20 A	20 A	20 A	20 A	20 A	20 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	YES	YES	NO	YES	YES
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1	1

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