Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN
参数名称 | 属性值 |
厂商名称 | Integrated Circuit Systems(IDT ) |
零件包装代码 | SOT-23 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
Is Samacsys | N |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 20 V |
最大漏极电流 (ID) | 3.2 A |
最大漏源导通电阻 | 0.085 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 10 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
AF2302NWLA | AF2302NWL | RCWP12068M87FKEC | AF2302NWA | |
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描述 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | Fixed Resistor, Metal Glaze/thick Film, 0.25W, 8870000ohm, 100V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CHIP | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown | unknown | compliant | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
端子数量 | 3 | 3 | 2 | 3 |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMT | SMALL OUTLINE |
表面贴装 | YES | YES | YES | YES |
厂商名称 | Integrated Circuit Systems(IDT ) | Integrated Circuit Systems(IDT ) | - | Integrated Circuit Systems(IDT ) |
零件包装代码 | SOT-23 | SOT-23 | - | SOT-23 |
针数 | 3 | 3 | - | 3 |
Is Samacsys | N | N | - | N |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 20 V | 20 V | - | 20 V |
最大漏极电流 (ID) | 3.2 A | 3.2 A | - | 3.2 A |
最大漏源导通电阻 | 0.085 Ω | 0.085 Ω | - | 0.085 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G3 |
元件数量 | 1 | 1 | - | 1 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 10 A | 10 A | - | 10 A |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
端子形式 | GULL WING | GULL WING | - | GULL WING |
端子位置 | DUAL | DUAL | - | DUAL |
晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING |
晶体管元件材料 | SILICON | SILICON | - | SILICON |
Base Number Matches | 1 | 1 | - | 1 |
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