Silicon
N-Channel
Power
MOSFET
R
○
CS37N06 AQ4-G
General Description
：
CS37N06 AQ4-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is PDFN 3.3*3.3
V
DSS
I
D
P
D
R
DS(ON)Typ
65
37
41.6
14
V
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤17
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
l
Halogen Free
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
P
D
T
J
，T
stg
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Rating
65
37
23.3
148
±20
114.5
41.6
0.33
150，–55 to 150
Units
V
A
A
A
V
mJ
W
W/℃
℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 2 0 V0 1
CS37N06 AQ4-G
Electrical Characteristics
（T
j
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=65V, V
GS
= 0V,
Tj = 25℃
V
DS
=52V, V
GS
= 0V,
Tj = 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
65
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
V
GS
=4.5V,I
D
=6A
Test Conditions
V
GS
=10V,I
D
=10A
Rating
Min.
--
--
1.0
Typ.
14
18
1.65
Max.
17
22
2.5
Units
mΩ
mΩ
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
=30V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
2.3
1668
113
86
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=30A V
DD
=30V
V
GS
= 10V
V
GS
=10V，R
G
=3Ω
V
DD
=30V，I
D
=30A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
10.6
40.8
5.6
6.8
33.8
5.9
9.4
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 2 0 V0 1
CS37N06 AQ4-G
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
R
○
Test
Conditions
T
C
= 25
°C
I
S
=10A,V
GS
=0V
di/dt=100A/us
IF=30A
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
31.6
49.5
Max.
37
148
1.2
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
3
75
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.5mH,Ias=21.4A
Start T
J
=25℃
a3
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 2 0 V0 1
CS37N06 AQ4-G
Characteristics Curve：
1000
45
40
100
35
R
○
P
D
,Power Dissipation,W
10μ
s
I
D
,Drain Current,A
30
25
20
15
10
10
100μ
s
1
Operation in This Area
is Limited by R
DS(on)
DC
1ms
10ms
0.1
SINGLE PULSE
T
C
=25℃
T
J
=150℃
5
0
0
25
50
75
100
12 5
150
T
C
,Case Temperature,℃
0.01
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
Figure 1
40
35
30
. Maximum Safe Operating Area
50
45
40
Figure 2. Maximum Power Dissipation vs
Case Temperature
Vgs=5V~10V
Vgs=4.5V
35
I
D
,Drain Current,A
25
20
15
10
I
D
,Drain Current[A]
30
25
20
15
10
Vgs=4V
5
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
5
0
0
0.5
1
Note:
1.250us Pulse Test
2.Tc=25℃
1.5
2
2.5
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
10
Figure 4. Typical output Characteristics
D=1
0.5
ZθJC,Thermal Response[℃ /W]
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
Notes:
1.Duty Cycle, D=t1/t2
2.T
JM
= P
DM
*R
θJA
+ T
A
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 2 0 V0 1
CS37N06 AQ4-G
100
Note:
1.V
DS
=5V
2.250us Pulse Test
100
R
○
Is,Source Current[A]
10
I
D
,Drain Current[A]
10
Tj=150℃
Tj=150℃
1
Tj=25℃
0.1
Tj=25℃
1
0.01
0
1
2
3
4
5
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
,Gate-to-Source Voltage[V]
V
SD
，
Source-to-Drain Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
2.4
30
R
DS(on),
Drain-to-Source On Resistance,mΩ
PULSED TEST
T
j
= 25℃
25
2.2
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
2
1.8
1.6
1.4
1.2
1
0.8
0.6
V
GS
= 4.5V
I
D
= 6A
V
GS
= 10V
I
D
= 10A
20
V
GS
= 4.5V
15
V
GS
= 10V
10
5
0
0
5
10
15
20
25
30
I
D
,Drain Current,A
0.4
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃ )
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
1.1
1.2
1.08
1
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
T
J
,Junction Temperature(℃ )
B
VDSS
,(Normalized)
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
1.15
1.06
1.04
1.1
1.02
1.05
1
V
GS(th)
,(Normalized)
Threshold Voltage
0.98
0.96
1
0.94
0.95
0.92
0.9
0.9
-50
-100 -25 -50 0
0
25
50
50
75
100 100 150
125
200
150
TT
J
,Junction Temperature(℃ )
J
,Junction Temperature(℃ )
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
2 0 2 0 V0 1
物联网大赛方案集锦
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
