ESMT
Revision History
Revision 0.1 (Oct. 23 1998)
-Original
Revision 0.2 (Dec. 4 1998)
-Add 200MHZ
Revision 1.0 (Dec. 10 1999)
-Delete Preliminary
-Rename the filename
Revision 1.1 (Jan. 26 2000)
-Add –5.5 Spec.
Revision 1.2 (Apr. 25 2000)
-Correct error typing of C1 dimension
Revision 1.3 (Nov. 27 2000)
-P5 Number of valid output data CAS Latency 3 2ea
-P17. P19. P21 Read Command shift right 1CLK
-P15. P19. P20 Precharge Command shift left 1CLK
Revision 1.4 (Feb. 22 2001)
-P6 modify tOH –6(2ns) & -7(2ns)
Revision 1.5 (Jun. 4 2001)
-P3. P4 modify DC current
Revision 1.6(Sep. 7 2001)
-P5 modify AC parameters
Revision 1.7 (Mar. 20 2002)
-P28 C1(Nom)=0.15mm 0.127mm
-P28 delete symbol=ZD
Revision 1.8 (Dec. 16 2003)
-Modify stand off=0.051~0.203mm
Revision 1.9 (Mar. 05 2004)
-Correct typing error of timing (tRC; tRP;tRCD)
-Add tRRD timing chart
Revision 2.0 (May. 10 2005)
Add “Pb-free” to ordering information
Revision 2.1 (Jul. 07 2005)
-Modify I
CC1
, I
CC2N
, I
CC3N
, I
CC4
, I
CC5
spec
-Delete –5.5, -6, -8, -10 AC spec
Revision 2.2 (Oct. 06 2005)
-Add 60V FBGA
Revision 2.3 (Nov. 15 2005)
-Modify VFBGA 60Ball Total high spec
Revision 2.4 (May. 03 2007)
- Delete BGA ball name of packing dimensions
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
1/30
ESMT
SDRAM
M12L16161A
512K x 16Bit x 2Banks
Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
CAS Latency (2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
32ms refresh period (2K cycle)
GENERAL DESCRIPTION
The M12L16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
Part NO.
M12L16161A-5TG
M12L16161A-7TG
M12L16161A-7BG
MAX Freq.
200MHz
143MHz
143MHz
PACKAGE COMMENTS
TSOP(II)
TSOP(II)
VFBGA
Pb-free
Pb-free
Pb-free
PIN CONFIGURATION (TOP VIEW)
1
2
DQ15
3
4
5
6
DQ0
7
VDD
V
DD
DQ0
DQ1
V
SSQ
DQ2
DQ3
V
DDQ
DQ4
DQ5
V
SSQ
DQ6
DQ7
V
DDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
V
SSQ
DQ13
DQ12
V
DDQ
DQ11
DQ10
V
SSQ
DQ9
DQ8
V
DDQ
N.C/RFU
UDQM
CLK
CKE
N.C
A9
A8
A7
A6
A5
A4
V
SS
50PIN TSOP(II)
(400mil x 825mil)
(0.8 mm PIN PITCH)
A
VSS
B
DQ14
VSSQ
VDDQ
DQ1
C
DQ13
VDDQ
VSSQ
DQ2
D
DQ12
DQ11
DQ4
DQ3
E
DQ10
VSSQ
VDDQ
DQ5
F
DQ9
VDDQ
VSSQ
DQ6
G
DQ8
NC
NC
DQ7
H
NC
NC
NC
NC
J
NC
UDQM
LDQM
WE
K
NC
CLK
RAS
CAS
L
CKE
NC
NC
CS
M
A11
A9
NC
NC
N
A8
A7
A0
A10
P
A6
A5
A2
A1
60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
R
VSS
A4
A3
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
2/30
ESMT
FUNCTIONAL BLOCK DIAGRAM
M12L16161A
I/O Control
Bank Select
Data Input Register
LWE
LDQM
Row Buffer
Refresh Counter
Row Decoder
Sense AMP
Output Buffer
512K x 16
512K x 16
Address Register
LRAS
CLK
DQi
CLK
ADD
LCBR
LRAS
Col. Buffer
Column Decoder
Latency & Burst Length
LCKE
Programming Register
LCBR
LWE
LCAS
LWCBR
LDQM
Timing Register
CKE
L(U)DQM
CS
RAS
CAS
WE
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
CKE
A0 ~ A10/AP
BA
RAS
CAS
WE
Name
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM.
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10, column address : CA0 ~ CA7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with
CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS ,
WE
active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Column Address Strobe
Write Enable
Data Input / Output Mask
L(U)DQM
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
3/30
ESMT
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
N.C/RFU
Data Input / Output
Power Supply/Ground
Data Output Power/Ground
No Connection/
Reserved for Future Use
M12L16161A
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ + 150
0.7
50
Unit
V
V
°
C
W
MA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
=0 to 70
°C
)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min
3.0
2.0
-0.3
2.4
-
-5
-5
Typ
3.3
3.0
0
-
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
5
5
Unit
V
V
V
V
V
uA
uA
Note
1
2
I
OH
=-2mA
I
OL
= 2mA
3
4
Note :
1.V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2.V
IL
(min) = -1.5V AC for pulse width
≤
10ns acceptable.
3.Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V
≤
V
OUT
≤
VDD.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°C
, f = 1MHz)
Pin
CLOCK
RAS , CAS ,
WE
, CS , CKE, LDQM,
UDQM
ADDRESS
DQ0 ~DQ15
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
4/30
ESMT
DC CHARACTERISTICS
M12L16161A
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°C
V
IH
(min)/V
IL
(max)=2.0V/0.8V)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
CAS
Latency
Version
-5
130
2
2
25
mA
-7
100
Unit Note
mA
mA
1
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0Ma, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
3
2
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
I
CC4
10
10
10
25
10
150
150
150
1
120
120
120
mA
mA
mA
mA
mA
1
I
CC5
I
CC6
mA
mA
2
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
5/30
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
