Silicon
N-Channel
Power
MOSFET
R
○
CS300N04 A8
General Description
：
CS300N04
A8,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
V
DSS
I
D
（
Silicon limited current
）
I
D
（
Package limited
）
P
D
R
DS(ON)Typ
40
300
120
271.7
1.6
V
A
A
W
mΩ
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤2.0
mΩ)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
l
BLDC Motor drive applications
l
l
l
Half-bridge and full-bridge topologies
Synchronous rectifier applications
DC/DC and AC/DC converters
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Absolute
（T
j
= 25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
a1
Rating
40
300
193.6
1200
±20
800
271.7
2.17
150，–55 to 150
300
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
V
GS
E
AS
P
D
T
J
，T
stg
T
L
a2
Avalanche Energy
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 8 V0 1
CS300N04 A8
Electrical Characteristics
（T
j
= 25
℃
unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=40V, V
GS
= 0V,
Tj = 25℃
V
DS
=32V, V
GS
= 0V,
Tj = 125℃
V
GS
=20V
V
GS
=-20V
Rating
Min.
Typ.
Max.
Units
V
µA
nA
nA
40
--
--
--
--
--
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=100A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
--
1.0
Typ.
1.6
2.2
Max.
2.0
3.0
Units
mΩ
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
R
g
C
iss
C
oss
C
rss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
GS
=0V, V
DS
=0V, f=1MHz
Rating
Min.
--
--
--
--
Typ.
1.7
13200
1135
910
Max.
--
--
--
--
Units
Ω
pF
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Vgs=10V，Vdd=20V
Id=100A
V
GS
=10V，Rg=2.7Ω
V
DD
=20V，Id=30A
Test Conditions
Rating
Min.
--
--
--
--
--
--
--
Typ.
44.8
24.9
220
56
211
54
45
Max.
--
--
--
--
--
--
--
Units
ns
nC
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 8 V0 1
CS300N04 A8
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=100A,V
GS
=0V
I
S
=50A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test
Conditions
T
C
= 25
°C
Rating
Min.
--
--
--
--
--
Typ.
--
--
--
40
45
Max.
300
1200
1.5
--
--
Units
A
A
V
ns
nC
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.46
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=0.1mH,Ias=126.5A
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2 0 1 8 V0 1
CS300N04 A8
Characteristics Curve：
10000
300
250
R
○
10μ
s
1000
P
D
,Power Dissipation,W
I
D
,Drain Current,A
200
100μ
s
100
Operation in This
Area
is Limited by R
DS(on)
10
SINGLE PULSE
T
C
=25℃
T
J
=150℃
1
0.1
1
10
100
V
DS
,Drain-to-Source Voltage,V
1ms
10ms
DC
150
100
50
0
0
25
50
75
100
125
150
T
C
,Case Temperature,℃
Figure 1
. Maximum Safe Operating Area
200
Figure 2. Maximum Power Dissipation vs
Case Temperature
Vgs=5.0V~10V
180
350
This Area
is Limited by Package
300
160
140
Vgs=4.5V
250
I
D
,Drain Current,A
I
D
,Drain Current[A]
Vgs=4.0V
120
100
80
60
Note:
1.250us Pulse Test
2.Tc=25℃
Vgs=3.5V
20
0
200
150
100
40
50
0
25
50
75
100
125
150
0
0.5
1
1.5
2
T
C
,Case Temperature,℃
V
DS
,Drain-to-Source Voltage[V]
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
1
Figure 4. Typical output Characteristics
D=1
0.5
Z
θJC
,Thermal Response[℃/W]
0.1
0.2
0.1
0.05
0.01
0.02
0.01
0.001
Single Pulse
0.0001
0.000001
0.0 0001
0.0001
0.001
0.01
0.1
1
10
T , Rectangular Pulse Duration [sec]
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 8 V0 1
CS300N04 A8
200
180
160
140
120
100
80
60
20
40
20
0
2
2.5
3
3.5
4
Tj=25℃
Note:
1.V
DS
=10V
2.250us Pulse Test
R
○
120
100
100
Is,Source Current[A]
Is,Source Current[A]
I
D
,Drain Current[A]
80
10
60
Tj=150℃
Tj=150℃
40
1
Tj=25℃
0
0.1
-0.2
0
0
0.2
0.20.4
0.4 0.6 0.6 0.80.8
11
1.2
1.2
V
SD
，Source-to-Drain
Voltage[V]
V
SD
，Source-to-Drain
Voltage[V]
V
GS
,Gate-to-Source Voltage[V]
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer
Characteristics
2
1.8
PULSED TEST
V
GS
= 10V
I
D
= 100A
4.0
R
DS(on),
Drain-to-Source On Resistance,mΩ
PULSED TEST
T
j
= 25℃
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
20.0
40.0
60.0
80.0
100.0
I
D
,Drain Current,A
V
GS
= 10V
R
DS(on)
,(Normalized)
Drain-to-Source On Resistance
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
Figure 8. Drain-to-Source On Resistance vs
Drain Current
1.3
1.2
1.1
V
GS
= V
DS
I
D
= 250μA
Figure 9. Normalized On Resistance vs
Junction Temperature
1.2
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
-50
0
50
100
150
T
J
,Junction Temperature(℃ )
B
VDSS
,(Normalized)
B
VDSS
,(Normalized)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
1.15
1.15
V
GS(th)
,(Normalized)
Threshold Voltage
1.1
1.1
1.05
1.05
1 1
0.95
0.95
0.9
0.9
-50
-100
-50 0
0
50
50
100 100150
200
150
,Junction Temperature(℃
TT,Junction Temperature(℃ ) )
JJ
Figure10. Normalized Threshold Voltage vs
Junction Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
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模拟电子
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