CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34
1N914 THRU 1N4454
SMALL SIGNAL SWITCHING DIODE
MECHANICAL DATA
.
Case:
DO-35 glass case
.
Polarity:
Color brand denotes cathode end
.
Weight:
Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak
reverse
Type
V
RM
(V)
Max.
Aver.
Current
Max.
Dissip
At 25
Max.
tempera-
ture
Max.
Forward
Voltage
drop
V
F
at I
F
(V)
1.0
1.0
1.0
0.55
0.55
1.0
1.0
1.0
0.54
0.50
0.55
1.0
10
10
200
0.10
0.10
0.10
20
30
0.50
0.10
0.01
10
Max.
Reverse
Current
I
R
25
25
100
50
50
100
25
25
50
50
50
100
Power Junction
voltage Rectified
Max. Reverse Recovery Time
trr(ns)
4.0
4.0
4.0
2.0
2.0
2.0
4.0
4.0
4.0
10
I(AV)Ma
P
tot
(mW
)
TJ
1N914
1N4149
1)
1N4150
1N4152
1N4153
1N4154
1N4447
1)
1N4449
1)
1N4450
1N4451
1N4453
1N4454
100
100
50
40
75
35
100
100
40
40
30
75
75
150
200
150
150
150
2)
150
150
150
150
150
150
500
500
500
400
400
500
500
500
400
400
400
400
200
200
200
175
175
200
200
200
175
175
175
175
at
20
20
50
30
50
25
20
20
30
30
20
50
(mA) (nA) V
R
(V) Max.
Test conditions
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=I
R
=10 to 200mA, to 0.1 I
F
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
I
F
=I
R
=10mA to, I
R
=1mA
I
F
=I
R
=10mA to, I
R
=1mA
4.0
I
F
=I
R
=10mA to, I
R
=1mA
Notes:
1.These diodes are also available in glass case DO-34
2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: P
to
t=300mW
T
STG
=-65 to +175
T
J
=175
R
JA
=400K/W
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