SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through - the - board mounting.
MOC212-M
MOC213-M
FEATURES
• UL Recognized (File #E90700, volume 2)
• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
• Minimum BV
CEO
of 30V guaranteed
CATHODE 2
7 BASE
ANODE 1
8 N/C
APPLICATIONS
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor and Detection Circuits
N/C 3
6 COLLECTOR
N/C 4
5 EMITTER
© 2005 Fairchild Semiconductor Corporation
Page 1 of 10
6/15/05
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
MOC212-M
MOC213-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Input-Output Isolation Voltage (1,2,3)
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
V
ISO
P
D
T
A
T
stg
T
L
2500
250
2.94
-40 to +100
-40 to +150
260
Vac(rms)
mW
mW/°C
°C
°C
°C
V
CEO
V
ECO
V
CBO
I
C
P
D
30
7.0
70
150
150
1.76
V
V
V
mA
mW
mW/°C
I
F
I
F
(pk)
V
R
P
D
60
1.0
6.0
90
0.8
mA
A
V
mW
mW/°C
Symbol
Value
Unit
© 2005 Fairchild Semiconductor Corporation
Page 2 of 10
6/15/05
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
MOC212-M
MOC213-M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
Collector-Output Current
(4)
MOC211-M
MOC212-M
MOC213-M
(I
F
= 10 mA, V
CE
= 10 V)
f = (60 Hz AC Peak, t = 1 min.)
(V = 500 V)
(I
C
= 2.0 mA, I
F
= 10 mA)
(V = 0 V, f = 1 MHz)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
) (Fig. 6)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
) (Fig. 6)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
) (Fig. 6)
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
) (Fig. 6)
CTR
V
ISO
R
ISO
V
CE (sat)
C
ISO
t
on
t
off
t
r
t
f
20
50
100
2500
10
11
—
—
—
—
—
—
—
—
—
—
—
—
0.2
7.5
5.7
3.2
4.7
—
—
—
—
—
0.4
—
—
—
—
—
%
Vac(rms)
Ω
V
pF
µs
µs
µs
µs
(V
CE
= 10 V, T
A
= 25°C)
(V
CE
= 10 V, T
A
= 100°C)
(I
C
= 100 µA)
(I
E
= 100 µA)
(f = 1.0 MHz, V
CE
= 0)
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
—
—
30
7.0
—
1.0
1.0
100
10
7.0
50
—
—
—
—
nA
µA
V
V
pF
(I
F
= 10 mA)
(V
R
= 6.0 V)
V
F
I
R
C
IN
—
—
—
1.15
0.001
18
1.5
100
—
V
µA
pF
Test Conditions
Symbol
Min
Typ**
Max
Unit
Isolation Surge Voltage
(1,2,3)
Isolation Resistance
(2)
Collector-Emitter Saturation Voltage
Isolation Capacitance
(2)
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
** Typical values at T
A
= 25°C
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
© 2005 Fairchild Semiconductor Corporation
Page 3 of 10
6/15/05
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
1.8
MOC212-M
10
MOC213-M
Fig. 2 Output Curent vs. Input Current
Fig. 1 LED Forward Voltage vs. Forward Current
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
1.4
T
A
= –55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
0.01
0.1
1
10
100
Fig. 3 Output Current vs. Ambient Temperature
10
I
F
- LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
T
A
- AMBIENT TEMPERATURE (°C)
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
10000
1.0
0.9
V
CE
=10V
Fig. 6 CTR vs. R
BE
(Unsaturated)
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
I
F
= 20mA
0.8
0.7
0.6
0.5
1000
I
F
= 10mA
100
NORMALIZED CTR
I
F
= 5mA
0.4
0.3
0.2
10
1
0.1
0.0
10
V
CE
= 5V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
100 0
0.1
0
20
40
60
80
100
R
BE
- BASE RESISTANCE (kΩ)
T
A
- AMBIENT TEMPERATURE (°C)
© 2005 Fairchild Semiconductor Corporation
Page 4 of 10
6/15/05
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
Fig. 7 CTR vs. R
BE
(Saturated)
1.0
0.9
3.5
4.0
V
CC
= 10V
I
C
= 2mA
R
L
= 100
NORMALIZED TO :
t
on
AT R
BE
= OPEN
MOC212-M
MOC213-M
Fig. 8 Normalized t
on
vs. R
BE
0.8
I
F
= 20mA
3.0
NORMALIZED CTR
0.7
0.6
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
V
CE
= 0.3V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
0.5
I
F
= 10mA
NORMALIZED t
on
2.5
2.0
1.5
1.0
0.0
0.01
0.1
1
10
100
R
BE
- BASE RESISTANCE (kΩ)
R
BE
- BASE RESISTANCE (M
Ω
)
Fig. 9 Normalized t
of
vs. R
BE
1.6
1.4
1.2
V
CC
= 10V
I
C
= 2mA
R
L
= 100
NORMALIZED TO :
t
of
AT R
BE
= OPEN
f
NORMALIZED t
of
f
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
100
R
BE
- BASE RESISTANCE
(M
Ω
)
© 2005 Fairchild Semiconductor Corporation
Page 5 of 10
6/15/05
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