DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 04
2000 May 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
PIN
DESCRIPTION
BFG540W
(see Fig.1)
1
2
3
4
collector
base
emitter
emitter
MARKING
TYPE NUMBER
BFG540W
BFG540W/X
BFG540W/XR
PINNING
CODE
N9
N7
N8
BFG540W
BFG540W/X; BFG540W/XR
fpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
BFG540W/X
(see Fig.1)
1
2
3
4
collector
emitter
base
emitter
2
Top view
1
MSB842
alfpage
3
4
BFG540W/XR
(see Fig.2)
1
2
3
4
collector
emitter
base
emitter
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
|s
21
|
2
F
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
T
s
≤
85
°C
I
C
= 40 mA; V
CE
= 8 V
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz; T
amb
= 25
°C
Γ
s
= Γ
opt
; I
C
= 10 mA; V
CE
= 8 V; f = 2 GHz
14
−
open emitter
collector-emitter voltage R
BE
= 0
CONDITIONS
MIN.
−
−
−
−
100
−
−
−
TYP. MAX. UNIT
−
−
−
−
120
0.5
9
16
10
15
2.1
20
15
120
500
250
−
−
−
−
−
−
pF
GHz
dB
dB
dB
dB
V
V
mA
mW
2000 May 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
85
°C;
see Fig.3; note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
BFG540W
BFG540W/X; BFG540W/XR
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
500
+150
175
V
V
V
UNIT
mA
mW
°C
°C
CONDITIONS
T
s
≤
85
°C;
note 1
VALUE
180
UNIT
K/W
handbook, halfpage
600
MBG248
P tot
(mW)
400
200
0
0
50
100
150
T s (
o
C)
200
V
CE
≤
10 V.
Fig.3 Power derating curve.
2000 May 23
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
CONDITIONS
BFG540W
BFG540W/X; BFG540W/XR
MIN.
20
15
2.5
−
100
−
−
−
−
TYP.
−
−
−
−
120
9
0.9
2
0.5
16
10
15
1.3
1.9
2.1
21
34
500
−50
MAX.
−
−
−
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
−
−
UNIT
V
V
V
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
open emitter; I
C
= 10
µA
; I
E
= 0
R
BE
= 0; I
C
= 40
µA
open collector; I
E
= 100
µA;
I
C
= 0
open emitter; V
CB
= 8 V; I
E
= 0
I
C
= 40 mA; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
maximum unilateral power gain; I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
−
note 1
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
−
|s
21
|
2
F
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz; 14
T
amb
= 25
°C
Γ
s
= Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz
−
−
−
P
L1
ITO
V
o
d
2
Notes
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
−
R
L
= 50
Ω;
T
amb
= 25
°C
note 2
note 3
note 4
−
−
−
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
2. I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
T
amb
= 25
°C;
s
21 2
=
10 log -------------------------------------------------------- dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
a) f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
−
q)
= 898 MHz and f
(2q
−
p)
= 904 MHz.
3. d
im
=
−60
dB (DIN45004B); V
p
= V
o
; V
q
= V
o
−6
dB; V
r
= V
o
−6
dB; R
L
= 75
Ω;
V
CE
= 8 V; I
C
= 40 mA;
a) f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
(p + q
−
r)
= 793.25 MHz.
4. I
C
= 40 mA; V
CE
= 8 V; V
o
= 275 mV; R
L
= 75
Ω;
T
amb
= 25
°C;
a) f
p
= 250 MHz; f
q
= 560 MHz; measured at f
(p + q)
= 810 MHz.
2000 May 23
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
handbook, halfpage
250
MRA749
handbook, halfpage
1
MRA750
hFE
200
Cre
(pF)
0.8
150
0.6
100
0.4
50
0.2
0
10
−2
10
−1
1
10
IC (mA)
10
2
0
0
4
8
VCB (V)
12
V
CE
= 8 V.
I
C
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
12
MLC044
fT
(GHz)
8
VCE = 8 V
VCE = 4 V
4
0
10
1
1
10
2
I C (mA) 10
f = 1 GHz; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
2000 May 23
5
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