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IS24C02C-2DLI

产品描述EEPROM, 256X8, Serial, CMOS, 2 X 3 MM, LEAD FREE, MO-229, DFN-8
产品类别存储    存储   
文件大小234KB,共22页
制造商Integrated Silicon Solution ( ISSI )
标准
下载文档 详细参数 全文预览

IS24C02C-2DLI概述

EEPROM, 256X8, Serial, CMOS, 2 X 3 MM, LEAD FREE, MO-229, DFN-8

IS24C02C-2DLI规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码SON
包装说明HVSON,
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最大时钟频率 (fCLK)0.4 MHz
JESD-30 代码R-XDSO-N8
JESD-609代码e3
长度3 mm
内存密度2048 bit
内存集成电路类型EEPROM
内存宽度8
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256X8
封装主体材料UNSPECIFIED
封装代码HVSON
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行SERIAL
认证状态Not Qualified
座面最大高度0.8 mm
串行总线类型I2C
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn) - annealed
端子形式NO LEAD
端子节距0.5 mm
端子位置DUAL
宽度2 mm
最长写入周期时间 (tWC)5 ms
Base Number Matches1

文档预览

下载PDF文档
IS24C02C
2K-bit 2-WIRE SERIAL CMOS EEPROM
with Special Write-Protection Modes
PRELIMINARY INFORMATION
MARCH 2008
FEATURES
• Two-Wire Serial Interface, I
2
C
TM
compatible
– Bidirectional data transfer protocol
– 400 kHz transfer rate
• Organization:
– 256 x 8-bit
• Data Protection Features
– Write Protect Pin
– Permanent Software Protection
– Reversible Software Protection
• 16-Byte Page Write Buffer
– Partial Page-writes permitted
• Low Power CMOS Technology
– Standby Current less than 1 µA (1.7V)
– Active Current less than 3 mA (3.6V)
• Low Voltage Operation: 1.7V to 3.6V
• Random or Sequential Read Modes
• Filtered Inputs for Noise Suppression
• Self timed Write cycle (5ms max.)
• High Reliability
– Endurance: 1,000,000 Cycles
– Data Retention: 40 Years
• Industrial temperature range
• Packages: SOIC, TSSOP, PDIP, MSOP and DFN
• Lead-free
DESCRIPTION
The IS24C02C is an electrically erasable PROM device
that uses the industry-standard I
2
C communication pro-
tocol. The IS24C02C contains a non-volatile memory
array of 2,048-bits (256 bytes), and is further subdivided
into 16 pages of 16 bytes each for Page-write mode.
The device operates over the voltage range of 1.7V to
3.6V to satisfy the voltage requirements of low voltage
applications. In normal Read or Write operations, a
master device communicates with the EEPROM via the
two wires Serial Clock and Serial Data. Optionally, the
first half of the array can be write-protected with either
a permanent or reversible software command, or the
entire array can be write-protected with the WP input
pin. The IS24C02C has three address pins, allowing up
to eight devices (or memory modules) to be uniquely
accessible in a system. To minimize board real-estate,
IS24C02C is available in the packages: SOIC (8),
TSSOP(8), PDIP(8), MSOP(8) and DFN(8).
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
03/18/2008
1
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