Datasheet> 器件分类 > 存储> IS42SM16400K-6BLI-TR

IS42SM16400K-6BLI-TR: 产品描述Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54; 产品类别存储; 文件大小1003KB，共33页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS42SM16400K-6BLI-TR概述

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54

IS42SM16400K-6BLI-TR规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant
Is Samacsys	N
最长访问时间	5.5 ns
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	S-PBGA-B54
内存密度	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
端子数量	54
字数	4194304 words
字数代码	4000000
最高工作温度	85 °C
最低工作温度	-40 °C
组织	4MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	FBGA
封装等效代码	BGA54,9X9,32
封装形状	SQUARE
封装形式	GRID ARRAY, FINE PITCH
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
连续突发长度	1,2,4,8,FP
最大待机电流	0.00001 A
最大压摆率	0.06 mA
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
Base Number Matches	1

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IS42SM/RM/VM16400K

16Bits

4Banks Mobile Synchronous DRAM

Description

These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and

output voltage levels are compatible with LVCMOS.

Features



JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 4 or 8 for Interleave Burst

• Programmable CAS Latency : 2,3 clocks

• All inputs and outputs referenced to the positive edge of the

system clock

• Data mask function by DQM

• Internal 4 banks operation

• Burst Read Single Write operation

• Special Function Support

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

- Full Strength or 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. A | August 2012

www.issi.com

- DRAM@issi.com

IS42SM16400K-6BLI-TR相似产品对比

	IS42SM16400K-6BLI-TR	IS42VM16400K-6BLI	IS42VM16400K-6BLI-TR	IS42SM16400K-6BLI	IS42SM16400K-75BLI	IS42SM16400K-75BLI-TR	IS42VM16400K-75BLI
描述	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54	Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	5.5 ns	5.5 ns	5.5 ns	5.5 ns	6 ns	6 ns	6 ns
最大时钟频率 (fCLK)	166 MHz	166 MHz	166 MHz	166 MHz	133 MHz	133 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	16	16	16	16	16	16	16
端子数量	54	54	54	54	54	54	54
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000	4000000
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	FBGA	TFBGA	FBGA	TFBGA	TFBGA	FBGA	TFBGA
封装等效代码	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
电源	3.3 V	1.8 V	1.8 V	3.3 V	3.3 V	3.3 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A
最大压摆率	0.06 mA	0.06 mA	0.06 mA	0.06 mA	0.055 mA	0.055 mA	0.055 mA
标称供电电压 (Vsup)	3.3 V	1.8 V	1.8 V	3.3 V	3.3 V	3.3 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Base Number Matches	1	1	1	1	-	-	-
零件包装代码	-	BGA	-	BGA	BGA	-	BGA
包装说明	-	TFBGA, BGA54,9X9,32	-	TFBGA, BGA54,9X9,32	TFBGA, BGA54,9X9,32	-	TFBGA, BGA54,9X9,32
针数	-	54	-	54	54	-	54
ECCN代码	-	EAR99	-	EAR99	EAR99	-	EAR99
访问模式	-	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST
其他特性	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
长度	-	8 mm	-	8 mm	8 mm	-	8 mm
功能数量	-	1	-	1	1	-	1
端口数量	-	1	-	1	1	-	1
工作模式	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
座面最大高度	-	1.2 mm	-	1.2 mm	1.2 mm	-	1.2 mm
自我刷新	-	YES	-	YES	YES	-	YES
最大供电电压 (Vsup)	-	1.95 V	-	3.6 V	3.6 V	-	1.95 V
最小供电电压 (Vsup)	-	1.7 V	-	3 V	3 V	-	1.7 V
宽度	-	8 mm	-	8 mm	8 mm	-	8 mm

IS42SM16400K-6BLI-TR

IS42SM16400K-6BLI-TR在线购买

IS42SM16400K-6BLI-TR概述

IS42SM16400K-6BLI-TR规格参数

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