MCP6001/1R/1U/2/4
1 MHz, Low-Power Op Amp
Features
•
•
•
•
•
•
•
Available in SC-70-5 and SOT-23-5 packages
Gain Bandwidth Product: 1 MHz (typical)
Rail-to-Rail Input/Output
Supply Voltage: 1.8V to 6.0V
Supply Current: I
Q
= 100 µA (typical)
Phase Margin: 90° (typical)
Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
• Available in Single, Dual and Quad Packages
Description
The Microchip Technology Inc. MCP6001/2/4 family of
operational amplifiers (op amps) is specifically
designed for general-purpose applications. This family
has a 1 MHz Gain Bandwidth Product (GBWP) and 90°
phase margin (typical). It also maintains 45° phase
margin (typical) with a 500 pF capacitive load. This
family operates from a single supply voltage as low as
1.8V, while drawing 100 µA (typical) quiescent current.
Additionally, the MCP6001/2/4 supports rail-to-rail input
and output swing, with a common mode input voltage
range of V
DD
+ 300 mV to V
SS
– 300 mV. This family of
op amps is designed with Microchip’s advanced CMOS
process.
The MCP6001/2/4 family is available in the industrial
and extended temperature ranges, with a power supply
range of 1.8V to 6.0V.
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Photodiode Amplifier
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6001
SC70-5, SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
-
+
MCP6001R
SOT-23-5
V
OUT
1
V
DD
2
4 V
IN
–
V
IN
+ 3
-
+
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer & Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
5 V
DD
5 V
SS
4 V
IN
–
MCP6002
PDIP, SOIC, MSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
- +
+
8 V
DD
7 V
OUTB
MCP6001U
SOT-23-5
V
IN
+ 1
V
SS
2
V
IN
– 3
+
-
5 V
DD
Typical Application
V
DD
V
IN
+
MCP6001
–
V
SS
R
1
R
1
Gain
= 1 + -----
-
R
2
V
OUT
-
6 V
INB
–
5 V
INB
+
4 V
OUT
MCP6002
2x3 DFN *
V
OUTA
1
V
INA
–
2
V
INA
+
3
V
SS
4
MCP6004
PDIP, SOIC, TSSOP
8
V
DD
V
OUTA
1
14 V
OUTD
- + + - 13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
- + + -
9 V
INC
–
8 V
OUTC
V –
7
V
OUTB INA
2
EP
9
6
V
INB
–
5
V
INB
+
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
R
2
V
REF
Non-Inverting Amplifier
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
©
2009 Microchip Technology Inc.
DS21733J-page 1
MCP6001/1R/1U/2/4
NOTES:
DS21733J-page 2
©
2009 Microchip Technology Inc.
MCP6001/1R/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins (V
IN
+, V
IN
–).....................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (T
J
)......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥
4 kV; 200V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 kΩ to V
L
, and V
OUT
≈
V
DD
/2 (refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current:
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
V
DD
I
Q
1.8
50
—
100
6.0
170
V
µA
Note 2
I
O
= 0, V
DD
= 5.5V, V
CM
= 5V
V
OL
, V
OH
I
SC
V
SS
+ 25
—
—
—
±6
±23
V
DD
– 25
—
—
mV
mA
mA
V
DD
= 5.5V,
0.5V Input Overdrive
V
DD
= 1.8V
V
DD
= 5.5V
A
OL
88
112
—
dB
V
OUT
= 0.3V to V
DD
– 0.3V,
V
CM
= V
SS
V
CMR
CMRR
V
SS
−
0.3
60
—
76
V
DD
+ 0.3
—
V
dB
V
CM
= -0.3V to 5.3V,
V
DD
= 5V
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
±1.0
19
1100
±1.0
10
13
||6
10
13
||3
—
—
—
—
—
—
pA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
V
OS
ΔV
OS
/ΔT
A
PSRR
-4.5
—
—
—
±2.0
86
+4.5
—
—
mV
µV/°C
dB
V
CM
= V
SS
(Note 1)
T
A
= -40°C to +125°C,
V
CM
= V
SS
V
CM
= V
SS
Sym
Min
Typ
Max
Units
Conditions
MCP6001/1R/1U/2/4 parts with date codes prior to December 2004 (week code 49) were tested to ±7 mV minimum/
maximum limits.
All parts with date codes November 2007 and later have been screened to ensure operation at
V
DD
= 6.0V. However, the other minimum and maximum specifications are measured at 1.8V and 5.5V.
©
2009 Microchip Technology Inc.
DS21733J-page 3
MCP6001/1R/1U/2/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
L
= V
DD
/2, V
OUT
≈
V
DD
/2, R
L
= 10 kΩ to V
L
, and C
L
= 60 pF (refer to
Figure 1-1
).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
6.1
28
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
1.0
90
0.6
—
—
—
MHz
°
V/µs
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC (150 mil)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-DFN (2x3)
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
—
—
331
256
85
163
206
68
70
120
100
—
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
—
—
—
—
+85
+125
+125
+150
°C
°C
°C
°C
Note
Sym
Min
Typ
Max
Units
Conditions
The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute Maximum
specification of +150°C.
DS21733J-page 4
©
2009 Microchip Technology Inc.
MCP6001/1R/1U/2/4
1.1
Test Circuits
C
F
6.8 pF
R
G
100 kΩ
V
P
V
IN+
MCP600X
V
IN–
V
M
R
G
100 kΩ
(V/V)
(V)
(mV)
C
F
6.8 pF
V
L
R
F
100 kΩ
R
L
10 kΩ
V
OUT
C
L
60 pF
C
B1
100 nF
R
F
100 kΩ
V
DD
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1.
Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
G
DM
= R
F
⁄
R
G
V
CM
=
(
V
P
+ V
DD
⁄
2
)
⁄
2
C
B2
1 µF
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+ V
OST
(
1 + G
DM
)
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
V
OST
= V
IN–
–
V
IN+
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
©
2009 Microchip Technology Inc.
DS21733J-page 5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
