Datasheet> 器件分类 > 存储> IS62WV12816ALL-70BI

IS62WV12816ALL-70BI: 产品描述Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48; 产品类别存储; 文件大小512KB，共17页; 制造商Integrated Silicon Solution ( ISSI )

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IS62WV12816ALL-70BI概述

Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48

IS62WV12816ALL-70BI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA
包装说明	TFBGA, BGA48,6X8,30
针数	48
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Factory Lead Time	8 weeks
Is Samacsys	N
最长访问时间	70 ns
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B48
JESD-609代码	e0
长度	8 mm
内存密度	2097152 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端子数量	48
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA48,6X8,30
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	1.8/2 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.00001 A
最小待机电流	1 V
最大压摆率	0.02 mA
最大供电电压 (Vsup)	2.2 V
最小供电电压 (Vsup)	1.65 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	6 mm
Base Number Matches	1

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IS62WV12816ALL

IS62WV12816BLL

FEATURES

128K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

• High-speed access time: 45ns, 55ns, 70ns

• CMOS low power operation

– 36 mW (typical) operating

– 9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 1.65V--2.2V V

(62WV12816ALL)

– 2.5V--3.6V V

(62WV12816BLL)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

• Lead-free available

NOVEMBER 2013

DESCRIPTION

The

ISSI

IS62WV12816ALL/ IS62WV12816BLL are high-

speed, 2M bit static RAMs organized as 128K words by

16 bits. It is fabricated using

ISSI

's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected) or when

CS1

LOW,

CS2 is

HIGH

and both

and

are HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory. A

data byte allows Upper Byte

(UB)

and Lower Byte (LB)

access.

The IS62WV12816ALL and IS62WV12816BLL are

packaged in the JEDEC standard 48-pin mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II).

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CS2

CS1

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. J

11/19/2013

IS62WV12816ALL-70BI相似产品对比

	IS62WV12816ALL-70BI	IS62WV12816BLL-55TI	IS62WV12816BLL-55T	IS62WV12816BLL-55BI	IS62WV12816BLL-55B2LI	IS62WV12816ALL-70BLI	IS62WV12816BLL-45TLI
描述	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48	128KX16 STANDARD SRAM, 55ns, PDSO44, 0.400 INCH, TSOP2-44	128KX16 STANDARD SRAM, 55ns, PDSO44, 0.400 INCH, TSOP2-44	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48	Standard SRAM, 128KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
是否无铅	含铅	含铅	含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	不符合	不符合	不符合	不符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA	TSOP2	TSOP2	DSBGA	DSBGA	DSBGA	TSOP2
包装说明	TFBGA, BGA48,6X8,30	0.400 INCH, TSOP2-44	0.400 INCH, TSOP2-44	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	TSOP2, TSOP44,.46,32
针数	48	44	44	48	48	48	44
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	70 ns	55 ns	55 ns	55 ns	55 ns	70 ns	45 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B48	R-PDSO-G44	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44
JESD-609代码	e0	e0	e0	e0	e1	e1	e3
长度	8 mm	18.41 mm	18.41 mm	8 mm	8 mm	8 mm	18.41 mm
内存密度	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	16	16	16	16	16	16	16
湿度敏感等级	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1
端子数量	48	44	44	48	48	48	44
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C
组织	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TSOP2	TSOP2	TFBGA	TFBGA	TFBGA	TSOP2
封装等效代码	BGA48,6X8,30	TSOP44,.46,32	TSOP44,.46,32	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	TSOP44,.46,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260	260	260
电源	1.8/2 V	3/3.3 V	3/3.3 V	3/3.3 V	2.7/3.3 V	1.8/2 V	3/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最小待机电流	1 V	1 V	1 V	1 V	1 V	1 V	1 V
最大压摆率	0.02 mA	0.03 mA	0.025 mA	0.03 mA	0.03 mA	0.02 mA	0.04 mA
最大供电电压 (Vsup)	2.2 V	3.6 V	3.6 V	3.6 V	3.6 V	2.2 V	3.6 V
最小供电电压 (Vsup)	1.65 V	2.5 V	2.5 V	2.5 V	2.5 V	1.65 V	2.5 V
标称供电电压 (Vsup)	1.8 V	3 V	3 V	3 V	3 V	1.8 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)
端子形式	BALL	GULL WING	GULL WING	BALL	BALL	BALL	GULL WING
端子节距	0.75 mm	0.8 mm	0.8 mm	0.75 mm	0.75 mm	0.75 mm	0.8 mm
端子位置	BOTTOM	DUAL	DUAL	BOTTOM	BOTTOM	BOTTOM	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40	40	40
宽度	6 mm	10.16 mm	10.16 mm	6 mm	6 mm	6 mm	10.16 mm
Factory Lead Time	8 weeks	10 weeks	10 weeks	-	8 weeks	8 weeks	8 weeks
最大待机电流	0.00001 A	0.00001 A	0.00001 A	0.00001 A	-	0.00001 A	0.00001 A
Base Number Matches	1	1	1	1	1	-	-

IS62WV12816ALL-70BI

IS62WV12816ALL-70BI在线购买

IS62WV12816ALL-70BI概述

IS62WV12816ALL-70BI规格参数

文档预览

IS62WV12816ALL-70BI相似产品对比

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