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IS93C86A-3PI

产品描述EEPROM, 1KX16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
产品类别存储   
文件大小78KB,共13页
制造商Integrated Silicon Solution ( ISSI )
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IS93C86A-3PI概述

EEPROM, 1KX16, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8

IS93C86A-3PI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码DIP
包装说明DIP, DIP8,.3
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
Is SamacsysN
备用内存宽度8
最大时钟频率 (fCLK)2 MHz
数据保留时间-最小值40
耐久性1000000 Write/Erase Cycles
JESD-30 代码R-PDIP-T8
JESD-609代码e0
长度9.325 mm
内存密度16384 bit
内存集成电路类型EEPROM
内存宽度16
湿度敏感等级3
功能数量1
端子数量8
字数1024 words
字数代码1000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1KX16
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/5 V
认证状态Not Qualified
座面最大高度4.57 mm
串行总线类型MICROWIRE
最大待机电流0.000001 A
最大压摆率0.003 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm
最长写入周期时间 (tWC)5 ms
写保护SOFTWARE
Base Number Matches1

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IS93C76A
IS93C86A
ISSI
Preliminary Information
MAY 2005
®
8K-BIT/16K-BIT SERIAL ELECTRICALLY
ERASABLE PROM
FEATURES
• Industry-standard Microwire Interface
— Non-volatile data storage
— Low voltage operation:
Vcc = 1.8V to 5.5V -2
Vcc = 2.5V to 5.5V -3
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
• User Configured Memory Organization
— By 16-bit or by 8-bit
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E
2
PROM
technology
• Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
• Durable and reliable
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger Inputs
• Industrial and Automotive Temperature Grade
• Lead-free available
DESCRIPTION
IS93C76A/86A are 8kb/16kb non-volatile, ISSI
®
serial EEPROMs. They are fabricated using an
enhanced CMOS design and process. IS93C76A/
86A contains power-efficient read/write memory,
and organization of either 1,024/2,048 bytes of 8
bits or 512/1,024 words of 16 bits. When the
ORG pin is connected to Vcc or left unconnected,
x16 is selected; when it is connected to ground,
x8 is selected.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device are write-enabled.
A selected x8 byte or x16 word can be modified
with a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or
ERASE ALL can program an entire array. Once a
device begins its self-timed program procedure,
the data out pin (Dout) can indicate the READY/
BUSY
status by raising chip select (CS). The self-
timed write cycle includes an automatic erase-
before-write capability. The devices can output
any number of consecutive bytes/words using a
single READ instruction.
FUNCTIONAL BLOCK DIAGRAM
DATA
REGISTER
D
IN
INSTRUCTION
REGISTER
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
ADDRESS
REGISTER
DUMMY
BIT
R/W
AMPS
ADDRESS
DECODER
EEPROM
ARRAY
1024/2048x8
512/1024x16
D
OUT
CS
SK
WRITE
ENABLE
HIGH VOLTAGE
GENERATOR
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00F
05/26/05
1

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