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IRF740A / RF1S740AST
September 2002
IRF740A / RF1S740AST
10A, 400V, 0.550 Ohm, N-Channel SMPS Power MOSFET
Applications
• Switch Mode Power Supplies (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
• Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
• Improved Body Diode
Features
• Low Gate Charge Q
g
results in Simple Drive
Requirement
Package
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
Symbol
JEDEC TO-263AB
DRAIN
(FLANGE)
G
S
SOURCE
D
Absolute Maximum Ratings
T
J
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw
10
6.3
40
147
1.18
-55 to 150
300 (1.6mm from case)
10ibf*in (1.1N*m)
A
A
A
W
W/
o
C
o
o
Ratings
400
±30
Units
V
V
C
C
Thermal Characteristics
R
θJC
R
θCS
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink, Flat, Greased Surface
Thermal Resistance Junction to Ambient
0.85
0.50 TYP
62
o
C/W
C/W
o
C/W
o
©2002
Fairchild Semiconductor Corporation
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Package Marking and Ordering Information
Device Marking
IRF740A
RF1S740A
Device
IRF740A
RF1S740AST
Package
TO-220AB
TO-263AB
Reel Size
Tube
330mm
Tape Width
NA
24mm
Quantity
50
800
Electrical Characteristics
T
J
= 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Statics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250µA, V
GS
= 0V
V/°C Reference to 25°C,
ID = 1mA
V
GS
= 10V, I
D
= 6A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 350V
V
GS
= 0V
V
GS
=
±20V
T
C
=
150
o
400
-
-
2.0
-
-
-
-
0.48
0.40
3.6
-
-
-
-
-
0.55
4.0
1
250
±100
Ω
V
µA
nA
V
∆B
VDSS
/∆T
J
Breakdown Voltage Temp. Coefficient
r
DS(ON)
V
GS(th)
I
DSS
I
GSS
Drin to Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
C
OSS
C
OSS
Forward Transconductance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
V
DS
= 50V, I
D
= 6A
V
GS
= 10V,
V
DS
= 320V,
I
D
= 10A
V
DD
= 200V,
I
D
= 10A
R
G
= 10Ω,
R
D
= 19.5Ω
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V, V
DS
= 1V,
f = 1MHz
V
GS
= 0V, V
DS
= 320V,
f = 1MHz
4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
17.2
4.5
5.8
6
8
21
7
1060
150
7.8
1490
52
-
22
6.0
7.5
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
pF
pF
Avalanche Characteristics
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
630
-
12.5
-
-
-
-
10
-
mJ
A
mJ
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
RR
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 18A
I
SD
= 9A
I
SD
= 10A, dI
SD
/dt = 100A/ms
I
SD
= 10A, dI
SD
/dt = 100A/ms
-
D
-
-
-
-
240
1.9
10
40
1.25
1.0
360
2.9
A
A
V
V
ns
µC
G
S
-
-
-
-
-
©2002
Fairchild Semiconductor Corporation
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Typical Characteristic
100
I
D
, DRAIN TO SOURCE CURRENT (A)
I
D
, DRAIN TO SOURCE CURRENT (A)
T
C
= 25
o
C
V
GS
DESCENDING
10V
7V
6V
5.5V
5V
4.5V
100
T
C
= 150
o
C
V
GS
DESCENDING
10V
6V
5.5V
5V
4.5V
10
10
1.0
1.0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.1
0.1
1.0
10
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.1
0.1
1.0
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
r
DS(ON)
, DRAIN TO SOURCE ON RESISTANCE (W)
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
DD
= 50V
I
D
, DRAIN CURRENT (A)
10
1.0
Figure 2. Output Characteristics
T
J
= 25
o
C
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.8
T
J
= 150
o
C
0.6
0.4
1.0
0.2
V
GS
= 10V, I
D
= 10A
0
-50
-25
0
25
50
75
100
125
150
0.1
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. Transfer Characteristics
Figure 4. Drain To Source On Resistance vs
Junction Temperatrue
16
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 10A
10
4
V
GS
= 0V, f = 1MHz
C
ISS
C, CAPACITANCE (pF)
10
3
12
200V
C
OSS
10
2
C
RSS
10
1
C
ISS
= C
GS
+ C
GD
C
OSS
@ C
DS
+ C
GD
C
RSS
= C
GD
10
0
1.0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
8
320V
80V
4
0
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
©2002
Fairchild Semiconductor Corporation
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Typical Characteristic
100
I
SD
, SOURCE TO DRAIN CURRENT (A)
100
T
C
= 25
o
C
T
J
= 150
o
C
10
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
100ms
1ms
1.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
10ms
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
Figure 7. Source to Drain Diode Forward Voltage
10
Figure 8. Maximum Safe Operating Area
8
I
D
, DRAIN CURRENT (A)
6
4
2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9. Maximum Drain Current vs Case Temperature
Z
qJC
, NORMALIZED THERMAL RESPONSE
10
0
0.50
0.20
0.10
10
-1
0.05
0.02
0.01
P
D
t
1
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
qJC
X R
qJC
) + T
C
10
-2
SINGLE PULSE
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
©2002
Fairchild Semiconductor Corporation
IRF740A / RF1S740AST Rev. C
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