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IS61VPS25618A-250B2I: 产品描述Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119; 产品类别存储存储; 文件大小498KB，共26页; 制造商Integrated Silicon Solution ( ISSI )

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IS61VPS25618A-250B2I概述

Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119

IS61VPS25618A-250B2I规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	BGA
包装说明	BGA, BGA119,7X17,50
针数	119
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Is Samacsys	N
最长访问时间	2.6 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	250 MHz
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B119
JESD-609代码	e0
长度	22 mm
内存密度	4718592 bit
内存集成电路类型	CACHE SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	119
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA119,7X17,50
封装形状	RECTANGULAR
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	2.5 V
认证状态	Not Qualified
座面最大高度	2.41 mm
最大待机电流	0.000075 A
最小待机电流	2.38 V
最大压摆率	0.25 mA
最大供电电压 (Vsup)	2.75 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	1.27 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	14 mm
Base Number Matches	1

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IS61(64)LPS12832A

IS61(64)LPS12836A IS61(64)VPS12836A

IS61(64)LPS25618A IS61(64)VPS25618A

128K x 32, 128K x 36, 256K x 18

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

• Three chip enable option for simple depth ex-

pansion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• Power Supply

LPS: V

3.3V + 5%,

ddq

3.3V/2.5V + 5%

VPS: V

2.5V + 5%,

ddq

2.5V + 5%

• JEDEC 100-Pin QFP, 119-ball and 165-ball

BGA packages

• Automotive temperature available

• Lead Free available

DECEMBER 2013

4 Mb SYNCHRONOUS PIPELINED, SINgLE CYCLE DESELECT STATIC RAM

DESCRIPTION

The

ISSI

IS61(64)LPS12832A, IS61(64)LPS/VP-

S12836A and IS61(64)LPS/VPS25618A are

high-speed,

low-power synchronous static

RAMs

designed to provide

burstable, high-performance memory for communication

and networking applications. The IS61(64)LPS12832A

organized as 131,072 words by 32 bits.

The IS61(64)LPS/

VPS12836A is organized as 131,072 words by 36 bits.

The IS61(64)LPS/VPS25618A

is organized as 262,144

words by 18 bits. Fabricated with

ISSI

's advanced CMOS

technology, the device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit. All synchronous inputs pass

through registers controlled by a positive-edge-triggered

single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be one

to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written.

The byte write operation is performed by using the byte

write enable (BWE) input combined with one or more

individual byte write signals (BWx).

In addition, Global

Write (GW)

is available for writing all bytes at one time,

regardless of the byte write controls.

Bursts can be initiated with either ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be gener-

ated internally and controlled by the

ADV

(burst address

advance) input pin.

The mode pin is used to select the burst sequence or-

der, Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH

or left floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

250

2.6

250

200

3.1

200

Units

MHz

Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liabil-

ity arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. H1

12/06/2013

IS61VPS25618A-250B2I相似产品对比

	IS61VPS25618A-250B2I	IS61VPS25618A-200B2	IS61VPS25618A-200B2I	IS61VPS25618A-200B3	IS61VPS25618A-250B2	IS61VPS25618A-250B3	IS61VPS25618A-250B3I
描述	Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119	Cache SRAM, 256KX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119	Cache SRAM, 256KX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119	Cache SRAM, 256KX18, 3.1ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165	Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119	Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165	Cache SRAM, 256KX18, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40	TBGA, BGA165,11X15,40
针数	119	119	119	165	119	165	165
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Is Samacsys	N	N	N	N	N	N	N
最长访问时间	2.6 ns	3.1 ns	3.1 ns	3.1 ns	2.6 ns	2.6 ns	2.6 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	250 MHz	200 MHz	200 MHz	200 MHz	250 MHz	250 MHz	250 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	22 mm	22 mm	22 mm	15 mm	22 mm	15 mm	15 mm
内存密度	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	18	18	18	18	18	18	18
功能数量	1	1	1	1	1	1	1
端子数量	119	119	119	165	119	165	165
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C	85 °C
组织	256KX18	256KX18	256KX18	256KX18	256KX18	256KX18	256KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	BGA	TBGA	BGA	TBGA	TBGA
封装等效代码	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA165,11X15,40	BGA119,7X17,50	BGA165,11X15,40	BGA165,11X15,40
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.41 mm	2.41 mm	2.41 mm	1.2 mm	2.41 mm	1.2 mm	1.2 mm
最大待机电流	0.000075 A	0.00007 A	0.000075 A	0.00007 A	0.00007 A	0.00007 A	0.000075 A
最小待机电流	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V
最大压摆率	0.25 mA	0.2 mA	0.21 mA	0.2 mA	0.225 mA	0.225 mA	0.25 mA
最大供电电压 (Vsup)	2.75 V	2.75 V	2.75 V	2.75 V	2.75 V	2.75 V	2.75 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1.27 mm	1.27 mm	1.27 mm	1 mm	1.27 mm	1 mm	1 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	14 mm	14 mm	14 mm	13 mm	14 mm	13 mm	13 mm
Base Number Matches	1	1	1	1	1	1	1
湿度敏感等级	3	3	3	-	3	-	-

IS61VPS25618A-250B2I

IS61VPS25618A-250B2I概述

IS61VPS25618A-250B2I规格参数

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IS61VPS25618A-250B2I相似产品对比

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