Ordering number:0000000
PNP/NPN Silicon Epitaxial Planar Transistors
MCH3105/3205
High-Current Switching Applications
TENTATIVE
Applications
· DC-DC converters relay drivers, lamp drivers, motor
drivers, strobes.
Package Dimensions
unit:mm
0000A
[MCPH3105/3205]
0.25
Features
· Adoption of FBET, MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-package of 0.85mm mounting heigh
facilitates miniaturization in end products.
· High allowable power dissipation.
0.3
3
0.15
1.6
1
0.65
2.0
2
0.25
2.1
0.15
Specifications
( ) : MCPH3105
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
0.85
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
Ratings
(– 50)80
(– 50)80
(– )50
(– )6
(– )3
(– )6
(– )600
Unit
V
V
V
V
A
A
mA
W
˚C
˚C
Mounted on a ceramic board (600mm
×0.8mm)
2
0.8
150
– 55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=(– )40V, IE=0
VEB=(– )4V, IC=0
VCE=(– )2V, IC=(– )100mA
VCE=(– )10V, IC=(– )500mA
VCB=(– )10V, f=1MHz
200
(360)
380
(24)13
Conditions
Ratings
min
typ
max
(– )1
(– )1
560
MHz
MHz
pF
Unit
µA
µA
Marking : MCPH3105 : AE, MCPH3205 : CE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
HD Seigi 010312 1/2
MCH3105/3205
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
(– 100)
80
(– 185)
140
(– )0.88
(– 50)
80
(– )50
80
(– )50
(– )6
(30)35
(230)
300
(15)22
max
(– 200)
120
(– 500)
210
(– )1.2
Unit
mV
mV
mV
mV
V
V
V
V
V
V
V
ns
ns
ns
ns
VCE(sat)1 IC=(– )1A, IB=(– )50mA
Collector-to-Emitter Saturation Voltage
VCE(sat)2
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
VBE(sat)
IC=(– )2A, IB=(– )100mA
IC=(– )2A, IB=(– )100mA
V(BR)CBO IC=(– )10µA, IE=0
V(BR)CES IC=(– )100µA, RBE=0
V(BR)CEO IC=(– )1mA, RBE=∞
V(BR)EBO IE=(– )10µA, IC=0
ton
tstg
tf
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20µs
D.C.≤1%
I NPUT
I B1
IB 2
RB
50Ω
VR
+
100µF
+
470µF
RL
OUTPUT
10IB1
=
-10IB2
=I
C
=1A
(For PNP, the polarity is reversed.)
25V
-5V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2000. Specifications and information herein are subject to
change without notice.
HD Seigi 0103122/2
嵌入式系统
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