RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BZT52C2V4-
BZT52C39
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 500 mWatts
FEATURES
*
*
*
*
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose Medium Current
Ideally Suited for Automated Assembly Processes
SOD-123
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.80)
.102(2.60)
.067(1.70)
.059(1.50)
.026(.65)
.018(.45)
.152(3.85)
.140(3.55)
.006(.15)
.003(.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
.049(1.25)
.041(1.05)
.004(.10)
.000(.00)
REF .020(0.50)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation @T
A
=25
o
C (Note 1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
D
T
J
T
STG
VALUE
500
-65 to +150
-65 to +150
UNITS
mW
o
o
C
C
o
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient (Note 1)
Max. Instantaneous Forward Voltage at I
F=
10mA
SYMBOL
R
θ
JA
V
F
MIN.
-
-
TYP.
-
-
MAX.
305
0.9
UNITS
o
C/W
Volts
2006-3
Note 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
ELECTRICAL CHARACTERISTICS
Zener voltage Range(Note 1)
V
Z
(V) @ I
ZT
TYPE
Nom
Volts
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Min
Volts
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
Max
Volts
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
Test
current
(@TA=25 C unless otherwise specified)
Maximum
reverse leakage
Current
I
R
(uA)
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
Typical
Temperature
Coefficent @I
ZTC
mV/
O
C
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
O
Maximum Zener impedance
(Note 2)
Z
ZT
at I
ZT
(Ω)
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
Z
ZK
(Ω)
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
at
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
Test
Current
I
ZTC
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
Notes 1. Short duration test pulse used to minimize self-heating effect.
2. f = 1KHz
RECTRON
RATING AND CHARACTERISTICS CURVES (BZT52CSV4-BZT52C39)
0.6
PD, POWER DISSIPATION (W)
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
O
50
T
J
=25
O
C
C2V7
C3V9 C5V6
C6V8
C6V2
C8V2
C3V3 C4V7
IZ, ZENER CURRENT(mA)
40
30
20
Test Current Iz
5.0mA
10
0
125
150
0
1
2
3
4
5
6
7
8
9
10
TA, AMBIENT TEMPERATURE( C)
VZ, ZENER VOLTAGE(V)
Figure1 Power Dissipation vs Ambient Temperature
30
T
J
=25
O
C
C10
Figure2 Zener Breakdown Characteristics
10
IZ, ZENER CURRENT (mA)
T
J
=25
O
C
C39
IZ, ZENER CURRENT (mA)
C12
8
20
C15
6
C18
10
Test Current Iz
5mA
Test Current Iz
2mA
4
2
0
C22
C27
C33
C36
Test Current Iz
2mA
0
0
10
20
VZ, ZENER VOLTAGE(V)
30
40
0
10
20
30
40
50
60
70
80
90 100
VZ, ZENER VOLTAGE(V)
Figure3 Zener Breakdown Characteristics
1000
CT,TOTAL CAPACITANCE(pF)
V
R
=1V
V
R
=2V
T
J
=25
O
C
f=1MHz
Figure4 Zener Breakdown Characteristics
100
V
R
=1V
V
R
=2V
1
0
10
VZ,NOMINAL ZENER VOLTAGE(V)
100
Figure5 Total Capacitance vs Nominal Zener Voltage
RECTRON
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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