MwT-H16
28
GHz High Power
AlGaAs/InGaAs PHEMT
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
50
50
75
241
72
FEATURES
•
28 dBm POWER OUTPUT AT 12 GHz
•
11 dB GAIN AT 12 GHz
•
0.3 MICRON REFRACTORY METAL/GOLD GATE
•
900 MICRON GATE WIDTH
50
35
52
35
52
35
52 35
1067
52
35
52
35
50
CHIP THICKNESS = 125 MICRONS
All Dimensions in Microns
DESCRIPTION
The MwT-H16 is an AlGaAs/InGaAs heterojunction
PHEMT
(Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal
0.3 micron gate length and 900 micron gate width make it ideally suited to applications requiring high-gain and power in the 500 MHz to
28
GHz frequency range with power outputs ranging from 500-700 milli-watts. The device is equally effective for either wideband (e.g. 6-
18 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and all devices are screened to insure
reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process for increased durability.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 6.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.5 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.5 mA
Thermal
Resistance
MwT-H16 Chip
mA
mS
V
V
V
°C/W
120
135
220
-2.0
-6.0
-8.0
-12.0
282
P1dB
SSG
Output Power at 1 dB Compression
VDS= 6.0 V Idss= 0.8 IDS=190mA
Small Signal Gain
VDS= 5.0 V IDS=190mA
Power Added Efficiency
VDS= 6.0V IDS=190mA
Recommended IDSS Range
for Optimum P1dB
Output Power at Max Efficiency
Compression Point = 1.5 dB
VDS= 6.0 V IDS= 190mA
12 GHz
12 GHz
12 GHz
dBm
dB
%
mA
27.0
10.0
40
28.0
11.0
50
102-
210
-5.0
PAE
Idss
-12.0
P
Max
55
12 GHz
dBm
28.0
29.0
DEVICE EQUIVALENT CIRCUIT MODEL
PARAMETER
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
VALUE
0.60
0.04
120.0
0.2
1.0
0.20
0.09
0.05
0.50
0.30
1.40
1.0
0.14
280.0
1.9
Ω
nH
Ω
pF
Ω
pF
nH
nH
pF
Ω
pF
Ω
pF
mS
psec
Lg
GATE
Rg
Cgs
Cgd
Rds
Rd
Ld
DRAIN
Cpg
Ri
gm
tau
Rs
Ls
SOURCE
Cds
Cpd
ORDERING INFORMATION
Chip
MwT-H16
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening
level required.
4268 Solar Way
Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-H16
32 GHz High Power
AlGaAs/InGaAs PHEMT
MwT-H16
DUAL BIAS
Output Reference
Plane
18 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT
FPH16
MwT-H16
OPTIONAL BONDING
Output Reference
Plane
13 Mils Long
Copper Heat Sink
5 Mils Below Level of Microstrip
MwT
FPH16
50
Ω
Output
Microstrip
2 Mils
50
Ω
Output
Microstrip
2 Mils
20 Mils
20 Mils
7 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
All Bond
Wires are 1.0
Mil Diameter
Gold Ridge
5x33x5 Mils
(2 each)
12 Mils Long
Input Reference
Plane
2 Mils
50
Ω
Input
Microstrip
All Bond
Wires are 1.0
Mil Diameter
Gold Blocks
10x10x5 for
Dual Bias, or
25 pF Caps
for Single
Bias (2 each)
Bonding Configuration used to Obtain “S” Data
MwT-H16
OPTIONAL SINGLE BIAS WITH CAPS
Output Reference
Plane
13 Mils Long
2 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
MwT
FPH16
50
Ω
Output
Microstrip
20 Mils
12 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
All Bond
(2 each)
Wires are 1.0
Mil Diameter
25 pF Caps
10x33x5 Mils
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
500
400
Ids (mA)
300
200
100
0
0
150
125
100
75°
C or Lower
°
Absolute Maximum
Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°
C
125
100
75°
C or Lower
°
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°
C
°
C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
240
360
2
4
Vds (V)
6
8
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
BIN SELECTION
BIN#
IDSS
(mA)
1
120-
135
2
135-
150
3
150-
165
4
165-
180
5
180-
195
6
195-
210
7
210-
225
8
225-
240
9
240-
255
10
255-
270
11
270-
285
12
285-
300
13
300-
315
14
315-
330
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
