TO-92 Plastic-Encapsulate Transistors
8050S
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-92
0.625 W (Tamb=25℃)
1. EMITTER
Collector current
0.5
A
I
CM:
Collector-base voltage
40 V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
2. COLLECTOR
3. BASE
1 2 3
unless otherwise specified)
Test
conditions
MIN
40
25
5
0.1
0.1
0.1
85
50
0.6
1.2
V
V
300
TYP
MAX
UNIT
V
V
V
Ic= 100
µA
, I
E
=0
Ic= 1 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 20V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 500mA
I
C
=500mA, I
B
=50 mA
I
C
=500mA, I
B
=50 mA
V
CE
= 6 V, IC=20mA
µ
A
µ
A
µ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
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