VS-EPH6007L-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 60 A FRED Pt
®
FEATURES
Base cathode
2
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
1
3
1
Cathode
3
Anode
TO-247AD 2L
VS-EPH6007L-N3
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
60 A
650 V
1.4 V
65 ns
175 °C
TO-247AD 2L
Single
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 98 °C (d = 0.50)
T
C
= 25 °C, t
p
= 8.3 ms; half sine wave
TEST CONDITIONS
MAX.
650
60
520
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 650 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
650
-
-
-
-
-
-
TYP.
-
1.8
1.4
0.02
-
37
8.0
MAX.
-
2.2
1.8
30
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 15-May-2018
Document Number: 96451
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH6007L-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
MIN.
-
-
-
-
-
-
-
TYP.
44
65
94
21
40
720
2300
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247 2L
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-55
-
-
-
-
1.2
(10)
TYP.
-
-
0.5
5.5
0.2
-
MAX.
175
0.65
-
-
-
2.4
(20)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
EPH6007L
Revision: 15-May-2018
Document Number: 96451
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH6007L-N3
www.vishay.com
Vishay Semiconductors
1000
175 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (μA)
100
150 °C
10
1
0.1
25 °C
0.01
0.001
10
T
J
= 175 °C
1
T
J
= 150°C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
700
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
700
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.1
0.01
DC
0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 15-May-2018
Document Number: 96451
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH6007L-N3
www.vishay.com
180
170
160
160
150
140
140
DC
I
F
= 60 A, T
J
= 125 °C
Vishay Semiconductors
Allowable Case Temperature (°C)
t
rr
(ns)
130
120
110
120
Square
wave (D = 0.50)
Rated V
R
applied
100
See
note
(1)
80
0
10
20
30
40
50
60
70
100
90
80
70
60
100
1000
I
F
= 60 A, T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
160
2400
RMS limit
2200
2000
1800
1600
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Average Power Loss (W)
140
120
I
F
= 60 A, T
J
= 125 °C
Q
rr
(nC)
100
80
60
40
20
0
0
20
40
60
80
100
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1400
1200
1000
800
600
400
200
0
100
1000
I
F
= 60 A, T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 15-May-2018
Document Number: 96451
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH6007L-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
P
3
H
4
60
5
07
6
L
7
-N3
8
Vishay Semiconductors product
E = single diode
P = TO-247
H = hyperfast recovery time
Current code (60 = 60 A)
6
7
8
-
-
-
Voltage code (07 = 650 V)
L = long lead
Environmental digit:
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-EPH6007L-N3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95536
www.vishay.com/doc?95648
Revision: 15-May-2018
Document Number: 96451
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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