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BPW76B

产品类别传感器    光学传感器   
文件大小151KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94
8401
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 40°
• Base terminal connected
• Hermetically sealed package
• Flat glass window
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW76A
BPW76B
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
0.4 to 0.8
> 0.6
ϕ
(deg)
± 40
± 40
λ
0.1
(nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW76A
BPW76B
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
TO-18
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/case
Note
T
amb
= 25 °C, unless otherwise specified
t
5s
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
10 ms
T
amb
25 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
R
thJC
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
www.vishay.com
398
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
Rev. 1.4, 08-Sep-08

 
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