VSMY7852X01
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: surface-mount
• Package form: Little Star
®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength:
λ
p
= 850 nm
20783
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
• Low thermal resistance: R
thJP
= 15 K/W
• Floor life: 1 year, MSL 2, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY7852X01 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance Little Star package. A 20 mil chip
provides outstanding low forward voltage and allows DC
operation of the device up to 250 mA.
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Machine vision IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMY7852X01
I
e
(mW/sr)
55
ϕ
(deg)
± 60
λ
p
(nm)
850
t
r
(ns)
8
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMY7852X01-GS08
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 2000 pcs, 2000 pcs/reel
PACKAGE FORM
Little Star
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-pin
According to Fig. 7, J-STD-20
According to J-STD-051, soldered on PCB
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJP
VALUE
5
250
500
1.5
500
125
-40 to +100
-40 to +100
260
15
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.7, 06-Apr-17
Document Number: 81146
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
Vishay Semiconductors
300
250
200
150
100
600
P
V
- Power Dissipation (mW)
400
300
200
R
thJP
= 15 K/W
100
0
0
20
40
60
80
100
120
I
F
- Forward Current (mA)
500
R
thJP
= 15 K/W
50
0
0
20
40
60
80
100
120
21779
T
amb
- Ambient Temperature (°C)
21780
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
TEST CONDITION
I
F
= 250 mA, t
p
= 10 ms
I
F
= 1 mA
V
R
= 5 V
I
F
= 250 mA, t
p
= 10 ms
I
F
= 250 mA, t
p
= 20 ms
I
F
= 1 A
SYMBOL
V
F
TK
VF
I
R
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
MIN.
-
-
TYP.
1.7
-1.5
MAX.
2.0
-
UNIT
V
mV/K
μA
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Not designed for reverse operation
30
-
-
-
-
-
-
-
-
55
130
-0.5
± 60
850
30
0.2
8
10
90
-
-
-
-
-
-
-
-
Rev. 1.7, 06-Apr-17
Document Number: 81146
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10
1
t
p
= 100 µs
I
F
- Forward Current (A)
1
Φ
e, rel
- Relative Radiant Power
0.75
0.1
0.5
0.01
0.25
0.001
0
21781
0.5
1
1.5
2
2.5
3
21776
0
650
750
850
950
V
F
- Forward Voltage (V)
λ-
Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Radiant Power vs. Wavelength
1000
0°
10°
20°
30°
I
e, rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 µs
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
10
1
0.1
0.001
0.01
0.1
1
10
948013-1
I
F
- Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.7, 06-Apr-17
Document Number: 81146
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMY7852X01
www.vishay.com
TAPING DIMENSIONS
in millimeters
Vishay Semiconductors
20846
Rev. 1.7, 06-Apr-17
Document Number: 81146
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
6
5.2
0.5
0.7
3
0.1
0.7
Vishay Semiconductors
2.6
1.6
2.6
0.6
Anode marking
0.3
Recommended
solder
pad
technical drawings
according to DIN
specifications
Recommended area for heat
sink
connected with anode pad
8.2
Not indicated tolerances ± 0.1
6.2
solder
pad cathode
2
Ø 3.3
6
7
17.5
8.65
3
solder
pad
anode
contour of
device
Drawing-No.: 6.541-5076.01-4
Issue: 3; 22.10.14
19
Rev. 1.7, 06-Apr-17
Document Number: 81146
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.2
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
