d. Maximum under steady state conditions is 85 °C/W
e. Package limited
b, d
SYMBOL
R
thJA
R
thJF
TYPICAL
39
18
MAXIMUM
50
22
UNIT
°C/W
S09-0764-Rev. B, 04-May-09
Document Number: 68394
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 2 A
T
C
= 25 °C
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 10 A
MIN.
20
-
-
1
-
-
-
30
-
-
-
-
-
-
-
-
-
-
0.15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
19
-5.3
-
-
-
-
-
0.0049
0.0056
55
3700
745
315
62
27.5
8
6
0.7
30
13
60
30
13
9
38
8
-
-
0.71
26
16
13
13
MAX.
-
-
-
2.1
± 100
1
10
-
0.0060
0.0070
-
-
-
-
95
42
-
-
1.4
55
25
100
55
25
18
65
16
5.1
50
1.1
50
30
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
current
a
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0764-Rev. B, 04-May-09
Document Number: 68394
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4114DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 3 V
Vishay Siliconix
3.0
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.4
30
1.8
20
1.2
T
C
= 125 °C
0.6
10
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
T
C
= 25 °C
T
C
= - 55 °C
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0070
Transfer Characteristics
4500
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0064
V
GS
= 4.5 V
0.0058
C - Capacitance (pF)
3600
2700
0.0052
V
GS
= 10 V
0.0046
1800
C
oss
900
C
rss
0
4
8
12
16
20
0.0040
0
10
20
30
40
50
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.7
V
DS
= 5 V
1.5
V
DS
= 10 V
R
DS(on)
- On-Resistance
(Normalized)
I
D
= 10 A
V
GS
= 4.5 V
8
6
V
DS
= 15 V
4
1.3
V
GS
= 10 V
1.1
2
0.9
0
0
13
26
39
52
65
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S09-0764-Rev. B, 04-May-09
Document Number: 68394
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4114DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
Vishay Siliconix
10
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.04
1
0.03
0.1
0.02
0.01
0.01
T
J
= 25 °C
0
2
4
6
T
J
= 125 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.6
170
On-Resistance vs. Gate-to-Source Voltage
0.3
V
GS(th)
- Variance (V)
I
D
= 250 µA
136
- 0.3
Power (W)
0.0
I
D
= 5 mA
102
68
- 0.6
34
- 0.9
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Junction Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.1
BVDSS
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S09-0764-Rev. B, 04-May-09
Document Number: 68394
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4114DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
Vishay Siliconix
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
7.0
1.80
5.6
1.44
Power (W)
Power (W)
4.2
1.08
2.8
0.72
1.4
0.36
0.0
0
25
50
75
100
125
150
0.00
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
Notes
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0764-Rev. B, 04-May-09
Document Number: 68394
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下，并且空间占用小、耗能低。 同时，便携式医疗设备还需要足够的计算能力以便处理医疗数据，能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑，上述需求需要低功耗的单片机（MCU）和数字信号控制器（Digital Signal Controller，DSC）。 正是有了嵌入式处理器，设计人员才有可能设...[详细]
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