d. Maximum under steady state conditions is 80 °C/W
S12-1135-Rev. A, 21-May-12
Document Number: 63917
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4090DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
a
a
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 7.5 V, I
D
= 12 A
V
GS
= 6 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
MIN.
100
-
-
2
-
-
-
30
-
-
-
-
-
TYP.
-
67
-6.4
-
-
-
-
-
0.0080
0.0085
0.0090
54
2410
790
60
45.6
27.9
8.5
9.2
63
1.3
16
11
35
10
14
10
36
10
-
-
0.75
49
58
21
28
MAX.
-
-
-
3.3
± 100
1
10
-
0.0100
0.0105
0.0120
-
-
-
-
69
42
-
-
95
2.6
32
22
70
20
28
20
70
20
7
70
1.1
95
115
-
-
UNIT
V
mV/°C
V
nA
μA
A
S
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 6 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
-
-
-
-
-
-
-
0.4
-
-
-
-
-
pF
nC
ns
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= 5 A
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-
-
-
-
-
-
-
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1135-Rev. A, 21-May-12
Document Number: 63917
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4090DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 5 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
Vishay Siliconix
42
12
T
C
= 25
°C
8
T
C
= 125
°C
28
V
GS
= 4 V
14
V
GS
= 3 V
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
4
T
C
= - 55
°C
0
0.0
1.4
2.8
4.2
5.6
7.0
V
GS
-
Gate-to-Source
Voltage (V)
0
Output Characteristics
0.0100
Transfer Characteristics
3200
C
iss
0.0094
R
DS(on)
- On-Resistance (Ω)
V
GS
= 6 V
C - Capacitance (pF)
2560
0.0088
V
GS
= 7.5 V
1920
C
oss
1280
0.0082
V
GS
= 10 V
0.0076
640
C
rss
0.0070
0
14
28
42
I
D
- Drain Current (A)
56
70
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 50 V
2.0
I
D
= 15 A
1.7
V
GS
= 10 V
6
V
DS
= 25 V
4
V
DS
= 75 V
1.4
V
GS
= 6 V
1.1
2
0.8
0
0
10
20
30
40
Q
g
- Total
Gate
Charge (nC)
50
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S12-1135-Rev. A, 21-May-12
Document Number: 63917
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4090DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
0.05
I
D
= 15 A
10
I
S
-
Source
Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.04
0.03
0.1
0.02
T
J
= 125
°C
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
0.4
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
- Variance (V)
160
0
Power (W)
150
120
- 0.2
I
D
= 5 mA
- 0.4
80
I
D
= 250 μA
- 0.6
40
- 0.8
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
I
D
Limited
100 μs
1 ms
10 ms
Limited by R
DS(on)
*
100 ms
0.1
10
I
D
- Drain Current (A)
1
T
A
= 25 °C
Single
Pulse
0.01
0.01
1
s
10
s
BVDSS Limited
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S12-1135-Rev. A, 21-May-12
Document Number: 63917
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4090DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
21.0
Vishay Siliconix
16.8
I
D
- Drain Current (A)
12.6
8.4
4.2
0.0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating
a
10
2.0
8
1.6
Power (W)
4
Power (W)
6
1.2
0.8
2
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S12-1135-Rev. A, 21-May-12
Document Number: 63917
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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