Si5935CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Temperature)
d, e
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 20
±8
- 4
g
- 3.8
- 3.1
b, c
- 2.5
b, c
- 10
- 2.6
- 1.7
b, c
3.1
2.0
1.3
b, c
0.8
b, c
- 55 to 150
260
A
Unit
V
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b, f
t
≤
5s
77
95
Maximum
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
33
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 130 °C/W.
g. Package limited.
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
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1
Symbol
R
thJA
R
thJF
Typ.
Max.
Unit
Si5935CDC
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.4 A, V
GS
= 0 V
- 0.8
21
13
17
4
T
C
= 25 °C
- 2.6
- 10
- 1.2
32
20
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 4.2
Ω
I
D
≅
- 2.4 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 4.2
Ω
I
D
≅
- 2.4 A, V
GEN
= - 8 V, R
g
= 1
Ω
f = 1 MHz
1.22
V
DS
= - 10 V, V
GS
= - 5 V, I
D
= - 3.1 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 3.1 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
455
70
54
7
6.2
0.85
1.75
6.1
3
11
21
6
10
32
25
6
12.2
6
17
32
12
20
48
38
12
ns
Ω
11
9.3
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.1 A
V
GS
= - 2.5 V, I
D
= - 2.8 A
V
GS
= - 1.8 V, I
D
= - 2.5 A
V
DS
= - 10 V, I
D
= - 3.1 A
- 10
0.083
0.100
0.130
9.5
0.100
0.120
0.156
S
Ω
- 0.4
- 20
- 19
2.5
- 1.0
- 100
-1
-5
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
Si5935CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
V
GS
= 5
V
thru 2
V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.4
3.0
6
1.8
T
C
= 25 °C
1.2
T
C
= 125 °C
0.6
4
V
GS
= 1.5
V
2
V
GS
= 1
V
0
0
1
2
3
4
5
T
C
= - 55 °C
0.0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.20
900
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
V
GS
= 1.8
V
0.12
V
GS
= 2.5
V
V
GS
= 4.5
V
0.08
750
600
C
iss
450
300
C
oss
150
C
rss
0.04
0.00
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 3.1 A
V
GS
- Gate-to-Source
Voltage
(V)
4
R
DS(on)
- On-Resistance
V
DS
= 10
V
3
V
DS
= 16
V
2
1.3
(Normalized)
1.5
Capacitance
V
GS
= - 2.5
V,
I
D
= - 2.8 A
1.1
V
GS
= - 4.5
V,
I
D
= - 3.1 A
0.9
1
0
0
1
2
3
4
5
6
7
8
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
On-Resistance vs. Junction Temperature
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3
Si5935CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.18
I
D
= - 3.1 A
0.15
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
0.12
T
J
= 125 °C
0.09
T
J
= 25 °C
1
T
J
= 150 °C
T
J
= 25 °C
0.06
0.03
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.00
0
2
4
6
8
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
40
On-Resistance vs. Gate-to-Source Voltage
0.7
30
0.6
V
GS(th)
(V)
Power (W)
I
D
= 250
µA
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
100
Single Pulse Power
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
100
µs
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100 ms
1 s, 10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 68965
S10-0548-Rev. B, 08-Mar-10
Si5935CDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6
5
I
D
- Drain Current (A)
4
Package Limited
3
2
1
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.2
3.2
0.9
Power (W)
2.4
Power (W)
0
25
50
75
100
125
150
0.6
1.6
0.3
0.8
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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