FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
TO-220AB
ITO-220AB
2
FEP16xT
PIN 1
PIN 3
PIN 2
CASE
3
1
FEPF16xT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, free-wheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
FEPB16xT
PIN 1
PIN 2
K
HEATSINK
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
8.0 A x 2
50 V to 600 V
200 A, 125 A
35 ns, 50 ns
0.95 V, 1.30 V, 1.50 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
FEP
16AT
50
35
50
FEP
16BT
100
70
100
FEP
16CT
150
105
150
FEP
16DT
200
140
200
16
FEP
16FT
300
210
300
FEP
16GT
400
280
400
FEP
16HT
500
350
500
FEP
16JT
600
420
600
UNIT
V
V
V
A
I
FSM
T
J
, T
STG
V
AC
200
- 55 to +150
1500
125
A
°C
V
Document Number 88596
22-Aug-06
www.vishay.com
1
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
(1)
Maximum DC reverse current
per diode at rated DC
blocking voltage
Maximum reverse recovery
time per diode
Typical junction capacitance
per diode
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
at 8.0 A
T
C
= 25 °C
T
C
= 100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
SYMBOL
V
F
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
V
0.95
10
500
35
85
1.30
1.50
I
R
µA
t
rr
C
J
50
60
ns
pF
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
R
θJC
FEP
2.2
FEPF
3.1
FEPB
2.2
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
FEP16JT-E3/45
FEPF16JT-E3/45
FEPB16JT-E3/45
FEPB16JT-E3/81
UNIT WEIGHT (g)
1.85
1.97
1.35
1.35
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/Tube
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tube
Tape Reel
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Document Number 88596
22-Aug-06
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
100
50 - 400
V
500 - 600
V
10
T
j
= 125 °C
16
12
Instantaneous Reverse Leakage
Current (µA)
Resistive or Inductive Load
Average Forward Current (A)
1
T
j
= 100 °C
8
T
j
= 25 °C
0.1
4
0
0
50
100
150
0.01
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
300
1000
T
C
= 100 °C
8.3
ms Single Half Sine-Wave
50 - 400
V
500 - 600
V
T
j
= 125 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
200
150
Junction Capacitance (pF)
250
100
100
50
0
1
10
100
10
0.1
1
10
100
Number
of Cycles at 60 Hz
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
40
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
T
j
= 125 °C
10
T
j
= 25 °C
1
Pulse
Width
= 300
µs
1
%
Duty Cycle
50 - 400
V
300 - 400
V
500 - 600
V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number 88596
22-Aug-06
www.vishay.com
3
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
T O-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 Ref.
(1.93) ref.
45° Ref.
See note
See note
0.076Ref.
(1.93)Ref.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
3
PIN
0.671 (17.04)
0.651 (16.54)
7° Ref.
0.350 (8.89)
0.330 (8.38)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
1
2
3
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
7° Ref.
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.560 (14.22)
0.530 (13.46)
0.080 (2.03)
0.065 (1.65)
0.110 (2.79)
0.100 (2.54)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note:
Copper exposure is allowablefor 0.005 (0.13) Max. from the
body
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88596
22-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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