PLL520-05/-06/-07/-08/-09
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)
FEATURES
•
•
100MHz to 200MHz Fundamental Mode Crystal.
Output range: 100 – 200MHz (no multiplication),
200 – 400MHz (2x multiplier), 400 – 800MHz (4x
multiplier), or 800MHz – 1GHz (PLL520-09
TSSOP only, 8x multiplier).
High yield design supports up to 2pF stray
capacitance at 200MHz.
CMOS (Standard drive PLL520-07 or Selectable
Drive PLL520-06), PECL (Enable low PLL520-08
or Enable high PLL520-05) or LVDS output
(PLL520-09).
Integrated variable capacitors.
Supports 3.3V-Power Supply.
Available in 16-Pin (TSSOP or 3x3mm QFN)
Note: PLL520-06 only available in 3x3mm.
Note: PLL520-07 only available in TSSOP.
PIN CONFIGURATION
(Top View)
VDD
XIN
XOUT
SEL3^
SEL2^
OE
VCON
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
SEL0^
SEL1^
GND
CLKC
VDD
CLKT
GND
GND
PLL 520-0x
•
•
•
•
•
GND/DRIVSEL*
SEL0^
10
GND
GND
BLOCK DIAGRAM
SEL
OE
VCON
Oscillator
Amplifier
w/
XIN
integrated
varicaps
XOUT
PLL
(Phase
Locked
Loop)
^: Internal pull-up
*: PLL520-06 pin 12 is output drive select (DRIVSEL)
(0 for High Drive CMOS, 1 for Standard Drive CMOS)
OUTPUT ENABLE LOGICAL LEVELS
Part #
PLL520-08
PLL520-05
PLL520-06
PLL520-07
PLL520-09
OE
State
Q
Q
0 (Default)
1
0
1 (Default)
VCON
Output enabled
Tri-state
Tri-state
Output enabled
PLL by-pass
OE input: Logical states defined by PECL levels for PLL520-08
Logical states defined by CMOS levels for PLL520-05/-06/-
07/-09
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 09/20/04 Page 1
GND
The PLL520-05/-06/-07/-08/-09 is a family of VCXO
ICs specifically designed to pull high frequency
fundamental crystals. Their design was optimized to
tolerate higher limits of interelectrode capacitance
and bonding capacitance to improve yield. They
achieve very low current into the crystal resulting in
better overall stability. Their internal varicaps allow
an on chip frequency pulling, controlled by the
VCON input.
XIN
XOUT
SEL2^
OE
12
13
14
15
16
1
VDD
DESCRIPTION
11
SEL1^
9
8
7
6
5
GND
CLKC
VDD
CLKT
P520-0x
2
3
4
PLL520-05/-06/-07/-08/-09
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)
PIN DESCRIPTIONS
Name
XIN
XOUT
OE
VCON
GND
DRIVSEL**
TSSOP*
Pin number
2
3
6
7
8,9, 10, 14
-
3x3mm QFN*
Pin number
13
14
16
1
2,3,4,8,12
12
Type
I
I
I
I
P
I
Description
Crystal in connector.
Crystal out connector.
Output enable pin.
Frequency control input (0.3V to 3.0V)
Ground (except pin 12 on PLL520-06: DRIVSEL see below).
PLL520-06 only: Drive Select Input. This pin has an internal
pull-up that will default DRIVSEL to ‘1’ when not connect to
GND. CMOS output of PLL520-06 will be high drive CMOS
when DRIVSEL is set to ‘0’, and will be standard CMOS
otherwise.
True output PECL (PLL520-08) or LVDS (PLL520-09)
(N/C for PLL520-07)
Complementary output PECL (PLL520-08) or LVDS
(PLL520-09)
(CMOS out for PLL520-07).
Multiplier selector pins. These pins have an internal pull-up
that will default SEL to ‘1’ when not connected to GND.
+3.3V power supply.
CLKT
CLKC
SEL0
SEL1
SEL2
SEL3
VDD
11
13
16
15
5
4
1, 12
5
7
10
9
15
Not available
6,11
O
O
I
I
I
I
P
*
Note: PLL520-06 only available in 3x3mm QFN, PLL520-07 only available in TSSOP.
** Note: DRIVSEL on pin 12 on PLL520-06 only.
FREQUENCY SELECTION TABLE
SEL3*
SEL2
SEL1
SEL0
Selected Multiplier
0*
1*
1*
1*
0
0
1
1
1
1
1
1
1
1
0
1
Fin x 8 (PLL520-09 in TSSOP only)
Fin x 4
Fin x 2
No multiplication
Note *:
SEL3 is not available (always “1”) in 3x3mm package
All pins have internal pull-ups (default value is 1). Connect to GND to set to 0.
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 09/20/04 Page 2
PLL520-05/-06/-07/-08/-09
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
Supply Voltage
Input Voltage, dc
Output Voltage, dc
Storage Temperature
Ambient Operating Temperature*
Junction Temperature
Lead Temperature (soldering, 10s)
ESD Protection, Human Body Model
SYMBOL
V
DD
V
I
V
O
T
S
T
A
T
J
MIN.
-0.5
-0.5
-65
-40
MAX.
4.6
V
DD
+0.5
V
DD
+0.5
150
85
125
260
2
UNITS
V
V
V
°C
°C
°C
°C
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
*
Note:
Operating Temperature is guaranteed by design for all parts (COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.
2. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Rating
Interelectrode Capacitance
Crystal Pullability
Recommended ESR
SYMBOL
F
XIN
C
L (xtal)
C
0
C
0
/C
1 (xtal)
R
E
CONDITIONS
Parallel Fundamental Mode
Die at VCON = 1.65V
AT cut
AT cut
MIN.
100
4
MAX.
200
3.5
250
30
UNITS
MHz
pF
pF
-
Ω
3. Voltage Controlled Crystal Oscillator
PARAMETERS
VCXO Stabilization Time *
VCXO Tuning Range
CLK output pullability
On-chip Varicaps control range
Linearity
VCXO Tuning Characteristic
VCON input impedance
VCON modulation BW
SYMBOL
T
VCXOSTB
CONDITIONS
From power valid
F
XIN
= 100 – 200MHz;
XTAL C
0
/C
1
< 250
0V
≤
VCON
≤
3.3V
VCON=1.65V,
±1.65V
VCON = 0 to 3.3V
MIN.
TYP.
MAX.
10
UNITS
ms
ppm
ppm
pF
%
ppm/V
kΩ
kHz
200*
±100*
4 – 18*
10*
65
60
0V
≤
VCON
≤
3.3V, -3dB
25
Note:
Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 09/20/04 Page 3
PLL520-05/-06/-07/-08/-09
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)
4. General Electrical Specifications
PARAMETERS
Supply Current (Loaded
Outputs)
Operating Voltage
Output Clock Duty Cycle
Short Circuit Current
SYMBOL
I
DD
V
DD
CONDITIONS
PECL/LVDS/CMOS
@ 50% V
DD
(CMOS)
@ 1.25V (LVDS)
@ V
DD
– 1.3V (PECL)
MIN.
TYP.
MAX.
100/80/40
UNITS
mA
V
%
mA
2.97
45
45
45
50
50
50
±50
3.63
55
55
55
5. Jitter Specifications
PARAMETERS
Period jitter RMS
Period jitter peak-to-peak
Accumulated jitter RMS
Accumulated jitter peak-to-peak
Random Jitter
Integrated jitter RMS at 155MHz
Period jitter RMS
Period jitter peak-to-peak
Accumulated jitter RMS
Accumulated jitter peak-to-peak
Random Jitter
Integrated jitter RMS at 622MHz
Measured on Wavecrest SIA 3000
CONDITIONS
At 155.52MHz, with capacitive decoupling
between VDD and GND. Over 10,000
cycles
At 155.52MHz, with capacitive decoupling
between VDD and GND. Over 1,000,000
cycles.
“RJ” measured on Wavecrest SIA 3000
Integrated 12 kHz to 20 MHz
At 622.08MHz, with capacitive decoupling
between VDD and GND. Over 10,000
cycles
At 622.08MHz, with capacitive decoupling
between VDD and GND. Over 1,000,000
cycles.
“RJ” measured on Wavecrest SIA 3000
Integrated 12 kHz to 20 MHz
MIN.
TYP.
2.5
18.5
2.5
24
2.5
0.3
11
45
11
24
3
1.6
MAX.
20
27
0.4
49
27
1.8
UNITS
ps
ps
ps
ps
ps
ps
ps
ps
6. Phase Noise Specifications
PARAMETERS
Phase Noise relative
to carrier
FREQUENCY
155.52MHz
622.08MHz
@10Hz
-75
-75
@100Hz
-95
-95
@1kHz
-125
-110
@10kHz
-140
-125
@100kHz
-145
-120
UNITS
dBc/Hz
Note: Phase Noise measured at VCON = 0V
7. CMOS Electrical Specifications
PARAMETERS
Output drive current
(High Drive)
Output drive current
(Standard Drive)
Output Clock Rise/Fall Time
(Standard Drive)
Output Clock Rise/Fall Time
(High Drive)
SYMBOL
I
OH
I
OL
I
OH
I
OL
CONDITIONS
V
OH
= V
DD
-0.4V, V
DD
=3.3V
V
OL
= 0.4V, V
DD
= 3.3V
V
OH
= V
DD
-0.4V, V
DD
=3.3V
V
OL
= 0.4V, V
DD
= 3.3V
0.3V ~ 3.0V with 15 pF load
0.3V ~ 3.0V with 15 pF load
MIN.
30
30
10
10
TYP.
MAX.
UNITS
mA
mA
mA
mA
2.4
1.2
ns
* Note: High Drive CMOS is available on PLL520-06 through DRIVSEL selector input on pin 12.
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 09/20/04 Page 4
PLL520-05/-06/-07/-08/-09
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)
8. LVDS Electrical Characteristics
PARAMETERS
Output Differential Voltage
V
DD
Magnitude Change
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
SYMBOL
V
OD
∆V
OD
V
OH
V
OL
V
OS
∆V
OS
I
OXD
I
OSD
CONDITIONS
MIN.
247
-50
TYP.
355
1.4
1.1
1.2
3
±1
-5.7
MAX.
454
50
1.6
1.375
25
±10
-8
UNITS
mV
mV
V
V
V
mV
uA
mA
R
L
= 100
Ω
(see figure)
0.9
1.125
0
V
out
= V
DD
or GND
V
DD
= 0V
9. LVDS Switching Characteristics
PARAMETERS
Differential Clock Rise Time
Differential Clock Fall Time
LVDS Levels Test Circuit
OUT
SYMBOL
t
r
t
f
CONDITIONS
R
L
= 100
Ω
C
L
= 10 pF
(see figure)
MIN.
0.2
0.2
TYP.
0.7
0.7
MAX.
1.0
1.0
UNITS
ns
ns
LVDS Switching Test Circuit
OUT
50Ω
C
L
= 10pF
V
OD
V
OS
V
DIFF
R
L
= 100Ω
50Ω
C
L
= 10pF
OUT
OUT
LVDS Transistion Time Waveform
OUT
0V (Differential)
OUT
80%
V
DIFF
20%
0V
80%
20%
t
R
t
F
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991
www.phaselink.com
Rev 09/20/04 Page 5
MEMS传感器
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