AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
)
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR26125EU
AGR26125EF
Sym
R
ı
JC
R
ı
JC
Value
0.5
0.5
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR26125EU
AGR26125EF
Derate Above 25
°C:
AGR26125EU
AGR26125EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
V
DSS
65
Vdc
V
GS
–0.5, +15 Vdc
P
D
P
D
—
—
T
J
350
350
2.0
2.0
200
W
W
W/°C
W/°C
°C
AGR26125EU (unflanged)
AGR26125EF (flanged)
5B 03 STYLE 1
Figure 1. Available Packages
Features
Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W.
Typical performance for MMDS systems.
f = 2600 MHz, I
DQ
= 1300 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
— Output power: 20 W
— Power gain: 11.5 dB.
— Power Added Efficiency (PAE): 19%.
— ACLR1: –35 dBc.
— ACLR2: –37 dBc.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
T
STG
–65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations.
PEAK Devices
Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
200
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
400
µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 1300 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
C
RSS
—
3.0
—
pF
Symbol
Min
Typ
Max
Un i t
Off Characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
M in
65
—
—
—
—
—
—
Typ
—
—
—
9
—
3.8
0.08
Max
—
4
200
12
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
On Characteristics
V
GS(TH)
V
GS(Q)
V
DS(ON)
(in
Agere Systems Supplied Test Fixture)
Functional Tests (in
Supplied Test Fixture)
Drain Efficiency*
G
PS
η
IM3
ACPR
IRL
—
—
—
—
Input Return Loss*
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2600.0 MHz, 6 µs pulse at 10% duty)
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
—
11.5
–38
–41
–15
20
—
—
—
—
dB
dBc
dBc
dB
W
%
P
1dB
ψ
—
125
—
—
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 125 W (CW), I
DQ
= 1300 mA, f
C
= 2600.0 MHz
VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V
DD
= 28 Vdc, I
DQ
= 1300 mA, and
P
OUT
= 20 W avg.
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 200 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 1300 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
C
RSS
—
3.0
—
pF
Symbol
Min
Typ
Max
Un i t
Off Characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
M in
65
—
—
—
—
—
—
Typ
—
—
—
9
—
3.8
0.08
Max
—
4
12
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
On Characteristics
V
GS(TH)
V
GS(Q)
V
DS(ON)
Functional Tests (in Agere Systems Supplied Test Fixture)
Drain Efficiency*
G
PS
η
IM3
ACPR
IRL
—
—
—
—
—
11.5
–38
–41
–15
20
—
—
—
—
—
dB
dBc
dBc
dB
W
%
Input Return Loss*
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2600.0 MHz, 6 µs pulse at 10% duty)
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
P
1dB
ψ
—
125
—
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 125 W (CW), I
DQ
= 1300 mA, f
C
= 2600.0 MHz
VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V
DD
= 28 Vdc, I
DQ
= 1300 mA, and
P
OUT
= 20 W avg.
AG R261 25E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26125E Component Layout
2
1
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
Parts List:
?
Microstrip Line: Z1: 0.785 in. x 0.066 in.;
Z2: 0.180 in. x 0.066 in.; Z3 0.315 in. x 0.176 in.;
Z4: 0.238 in. x 0.176 in.; Z5: 0.096 in. x 0.066 in.;
Z6: 0.070 in. x 0.140 in.; Z7: 0.216 in. x 0.050 in.;
Z8: 0.310 in. x 0.860 in.; Z9: 0.342 in. x 1.050 in.;
Z10: 0.723 in. x 0.038 in.; Z11: 0.723 in. x 0.038 in.;
Z12: 0.405 in. x 0.165 in.; Z13: 0.103 in. x 0.076 in.;
Z14: 0.194 in. x 0.076 in.; Z15: 0.465 in. x 0.114 in.;
Z16: 0.252 in. x 0.066 in.
®
?
ATC
chip capacitor:
C1: 6.8 pF series 100B;
C5, C6A, C6B, C13A, C13B,
C14A, C14B, C15: 4.7 pF series 100B;
C7A, C7B: 1.2 pF series 100B;
C16: 0.4 pF series 100A.
®
?
Murata
capacitor C8A, C8B: 0.01 µF case 0805.
®
?
Vitramon
capacitor C3: 22000 pF case 1206
®
?
Kemet
capacitor C4, C9A, C9B,
C10A, C10B: 22 µF, 35V;
C2, C11A, C11B, C12A, C12B: 0.1 µF case 1206.
®
?
Fair-Rite
ferrite bead: FB1: 2743019447.
?
1206 chip resistor: R1: 1 kΩ; R2: 560 kΩ; R3: 4.7
Ω.
?
WB1, WB2: 10 mil thick, 0.6 in. x 0.18 in.
®
?
Taconic
RF-35 board material, 1 oz. copper,
30 mil thickness,
ε
r = 3.5
B. Component Layout
Figure 2. AGR26125E Component Layout
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.0
Ð
>
W
A
V
EL
E
N
GTH
S
TOW
A
RD
0.0
0.49
0.48
±
180
170
U
CT
0.6
Z
0
= 10
Ω
IN
D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.6
1.8
1.4
2.0
3.0
4.0
5.0
10
20
D
L
OA
D
<
OW
A
R
7
HST
0.4
N
GT
-170
EL
E
V
WA
<Ð
-90
-160
0.2
0.49
0.1
0.4
0.48
)
/
Yo
(-jB
CE
-85
N
TA
EP
SC
1.
0
0
-15
-80
U
ES
6
0.4
4
0.0
V
TI
UC
0.3
IN
D
,O
o)
5
-70
06
0.
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
-5
0.9
1.0
50
5
-4
-
MHz (f)
2500 (f1)
2535 (f2)
2595 (f3)
2655 (f4)
2700 (f5)
Z
S
Ω
(complex
source impedance)
18.0 – j14.9
15.7 – j15.8
12.0 – j16.0
9.0 – j15.3
7.5 – j14.6
GATE (2, 3)
Z
S
Z
L
Ω
(complex
optimum load impedance)
2.5 – j3.7
2.3 – j3.5
2.1 – j3.2
1.9 – j2.9
1.7 – j2.7
DRAIN (6, 7)
Z
L
SOURCE (9)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
18
0.
0
-5
-25
44
0.
0.
5
-65
0.3
0.1
3
7
-30
-60
1.8
0
2.
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
0.0
0.4
9
1
NC
EC
OM
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
-1
0.
0.4
40
4
Z
X/
-20
5
0.0
3.
0
f5
-75
R
5.0
0.2
-15
4.0
1.
0
f1
0.8
Z
S
-10
f5
Z
L
0.6
0.
8
10
f1
50
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
0.
8
0.6
0.4
10
0.1
-1
20
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
RE
L
E
OF
ES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
31
0.
19
0.
07
30
0.
43
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