Preliminary Data Sheet
August 2004
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
)
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR26125EU
AGR26125EF
Sym
Value
Unit
R
θJC
R
θJC
0.5
0.5
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR26125EU
AGR26125EF
Derate Above 25
°C:
AGR26125EU
AGR26125EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
V
DSS
65
Vdc
V
GS
–0.5, +15 Vdc
P
D
P
D
—
—
T
J
350
350
2.0
2.0
200
W
W
W/°C
W/°C
°C
5B 03 STYLE 1
AGR26125EU (unflanged)
AGR26125EF (flanged)
Figure 1. Available Packages
Features
■
■
■
■
■
■
■
■
■
Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W.
Typical performance for MMDS systems.
f = 2600 MHz, I
DQ
= 1300 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
— Output power: 20 W
— Power gain: 11.5 dB.
— Power Added Efficiency (PAE): 19%.
— ACLR1: –35 dBc.
— ACLR2: –37 dBc.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
T
STG
–65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
August 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 200 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 1300 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2600.0 MHz, 6 µs pulse at 10% duty)
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 125 W (CW), I
DQ
= 1300 mA, f
C
= 2600.0 MHz
VSWR = 10:1; [all phase angles])
C
RSS
—
3.0
—
pF
Symbol
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
—
—
—
9
—
3.8
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
4
12
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
G
PS
η
IM3
—
—
—
11.5
20
–38
—
—
—
dB
%
dBc
ACPR
—
–41
—
dBc
IRL
P
1dB
ψ
—
—
–15
125
—
—
dB
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V
DD
= 28 Vdc, I
DQ
= 1300 mA, and
P
OUT
= 20 W avg.
2
Agere Systems Inc.
Preliminary Data Sheet
August 2004
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26125E Component Layout
2
1
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
Parts List:
■
Microstrip Line: Z1: 0.785 in. x 0.066 in.;
Z2: 0.180 in. x 0.066 in.; Z3 0.315 in. x 0.176 in.;
Z4: 0.238 in. x 0.176 in.; Z5: 0.096 in. x 0.066 in.;
Z6: 0.070 in. x 0.140 in.; Z7: 0.216 in. x 0.050 in.;
Z8: 0.310 in. x 0.860 in.; Z9: 0.342 in. x 1.050 in.;
Z10: 0.723 in. x 0.038 in.; Z11: 0.723 in. x 0.038 in.;
Z12: 0.405 in. x 0.165 in.; Z13: 0.103 in. x 0.076 in.;
Z14: 0.194 in. x 0.076 in.; Z15: 0.465 in. x 0.114 in.;
Z16: 0.252 in. x 0.066 in.
®
■
ATC
chip capacitor:
C1: 6.8 pF series 100B;
C5, C6A, C6B, C13A, C13B,
C14A, C14B, C15: 4.7 pF series 100B;
C7A, C7B: 1.2 pF series 100B;
C16: 0.4 pF series 100A.
®
■
Murata
capacitor C8A, C8B: 0.01 µF case 0805.
®
■
Vitramon
capacitor C3: 22000 pF case 1206
®
■
Kemet
capacitor C4, C9A, C9B,
C10A, C10B: 22 µF, 35V;
C2, C11A, C11B, C12A, C12B: 0.1 µF case 1206.
®
■
Fair-Rite
ferrite bead: FB1: 2743019447.
■
1206 chip resistor: R1: 1 kΩ; R2: 560 kΩ; R3: 4.7
Ω.
■
WB1, WB2: 10 mil thick, 0.6 in. x 0.18 in.
®
■
Taconic
RF-35 board material, 1 oz. copper,
30 mil thickness,
ε
r = 3.5
B. Component Layout
Figure 2. AGR26125E Component Layout
Agere Systems Inc.
3
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
August 2004
Typical Performance Characteristics
S
TOW
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
7
±
180
HST
0.4
70
N
GT
-1
E
V
EL
WA
<Ð
-90
-160
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.48
)
/
Yo
(-jB
CE
0.6
f1
8
0.
-85
N
TA
EP
SC
4
0.0
50
-1
-80
U
ES
V
TI
UC
0.4
0.3
6
IN
D
-75
R
O
),
Zo
5
0.0
5
0.4
X/
f5
18
0.
0
-5
-25
0
-65
.5
0
40
-1
-70
06
0.
44
0.
0.6
1.8
2.
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f)
2500 (f1)
2535 (f2)
2595 (f3)
2655 (f4)
2700 (f5)
Z
S
Ω
(complex
source impedance)
18.0 – j14.9
15.7 – j15.8
12.0 – j16.0
9.0 – j15.3
7.5 – j14.6
Z
L
Ω
(complex
optimum load impedance)
2.5 – j3.7
2.3 – j3.5
2.1 – j3.2
1.9 – j2.9
1.7 – j2.7
GATE (2, 3)
Z
S
DRAIN (6, 7)
Z
L
SOURCE (9)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
Agere Systems Inc.
F
0.
32
0.3
0.1
3
7
-30
-60
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
0.0
0.4
9
1
NC
EC
OM
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
0.
5.0
1.
0.2
0
-15
4.0
-20
3.
0
1.
0
f1
0.8
Z
S
-10
f5
Z
L
10
0.1
0.4
50
20
0.6
0.6
0.4
Z
0
= 10
Ω
A
RD
U
CT
0.48
IN
D
90
0.
8
10
0.1
0.
07
-1
30
0.
43
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
20
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
19
0.
31
Preliminary Data Sheet
August 2004
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
60
55
POWER (dBm), PAE (%)A
50
45
40
35
30
IRL
P1dB
GAIN
15
10
PAE
5
0
-5
-10
-15
-20
-25
2700
GAIN (dB), IRL (dB)Z
45
40
35
IM5
30
25
20
15
10
5
0
1000
25
20
2500
2550
2600
FREQUENCY, MHzA
2650
Figure 4. CW Broadband Performance
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
1
10
IM3
dBcZ
IM7
100
POUT (W, PEP)Z
Test Conditions:
Two-tone measurement @ 10 MHz tone spacing, V
DD
= 28 Vdc, F1 = 2590 MHz, F2 = 2600 MHz.
Figure 5. Two-tone IMD vs. Power
Agere Systems Inc.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
